Qucor Pty Limited

Michelle Yvonne Simmons

Robert Graham Clark

Steven Richard Schofield

Toby Hallam

Neil Jonathan Curson

Lars Oberbeck

Andrew Steven Dzurak

Alexander Rudolf Hamilton

Andreas Fuhrer

Mladen Mitic

Rolf Brenner

Frank J Ruess

Jeremy Lloyd O'Brien

K E Johnson Goh

Frank Ruess

Wilson Pok

Thilo Curd Gerhard Reusch

Bent Weber

Martin Fuechsle

This invention concerns the fabrication of nano to atomic scale devices, that is electronic devices fabricated down to atomic accuracy. The fabrication process uses either an SEM or a STM tip to pattern regions on a semiconductor substrate. Then, forming electrically active parts of the device at those regions. Encapsulating the formed device. Using a SEM or optical microscope to align locations for electrically conducting elements on the surface of the encapsulating semiconductor with respective active parts of the device encapsulated below the surface. Forming electrically conducting elements on the surface at the aligned locations. And, electrically connecting electrically conducting elements on the surface with aligned parts of the device encapsulated below the surface to allow electrical connectivity and tunability of the device. In further aspects the invention concerns the devices themselves.

Fabrication of atomic scale devices

This invention concerns the fabrication of nanoscale and atomic scale devices. The method involves creating one or more registration markers. Using a SEM or optical microscope to form an image of the registration markers and the tip of a scanning tunnelling microscope (STM). Using the image to position and reposition the STM tip to pattern the device structure. Forming the active region of the device and then encapsulating it such that one or more of the registration markers are still visible to allow correct positioning of surface electrodes. The method can be used to form any number of device structures including quantum wires, single electron transistors, arrays or gate regions. The method can also be used to produce 3D devices by patterning subsequent layers with the STM and encapsulating in between.

Fabricating nanoscale and atomic scale devices

This invention concerns nanoscale products, such as electronic devices fabricated to nanometer accuracy. It also concerns atomic scale products. These products may have an array of electrically active dopant atoms in a silicon surface, or an encapsulated layer of electrically active donor atoms. In a further aspect the invention concerns a method of fabricating such products. The methods include forming a preselected array of donor atoms incorporated into silicon. Encapsulation by growing silicon over a doped surface, after desorbing the passivating hydrogen. Also, using an STM to view donor atoms on the silicon surface during fabrication of a nanoscale device, and measuring the electrical activity of the donor atoms during fabrication of a nanoscale device. Such products and processes are useful in the fabrication of a quantum computer, but could have many other uses.

Substituted donor atoms in silicon crystal for quantum computer

Individual hydrogen atoms are desorbed from a hydrogen terminated layer on a silicon substrate, using an STM tip, to form a pattern of exposed regions. A single donor-bearing molecule (such as phosphorous atoms). The spins of the donor atoms may be used as qubits in a slid quantum computer.

Single molecule array on silicon substrate for quantum computer

Growing community of inventors

Coogee, Australia

Michelle Yvonne Simmons