Texas Instruments Corporation

Michelle N Nguyen

Andrew Marshall

Douglas Ticknor Grider

Xiang-Zheng Bo

Md Imran Hossain

In some examples, a transistor includes a first well doped with a first-type dopant having a first concentration. The transistor also includes a gate oxide layer on a portion of the first well and a gate layer on the gate oxide layer. The transistor further includes a first segment of a second well doped with the first-type dopant having a second concentration, the first segment underlapping a first portion of the gate layer. The transistor also includes a source region doped with a second-type dopant having a third concentration, the source region in the first segment. The transistor further includes a drain region doped with the second-type dopant having a concentration that is substantially the same as the third concentration.

Transistors with dual wells

Circuitry and methods for measuring capacitive mismatch with improved precision. The capacitors under measurement are connected in series in a voltage divider, with the node common to both capacitors connected to the gate of a source follower transistor. In one disclosed embodiment of the invention, a ramped voltage is applied to the drain of the source follower transistor simultaneously with the ramped voltage applied to the voltage divider; the slope of the ramped drain voltage is at the nominal slope of the voltage at the common node of the voltage divider. In another embodiment, a second transistor in saturation has its gate coupled to the source of the source follower device, and its source connected to the drain of the source follower device in series with a constant voltage drop. The drain-to-source voltage of the source follower device is thus held constant in each embodiment, improving precision of the measurement.

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Allen, TX, United States of America

Michelle N Nguyen