Western Digital Technologies, Inc.

Sandisk Technologies Inc.

Quantum Corporation

Smart Storage Systems, Inc.

Mke-quantum Components Colorado, LLC

Michelle Martin

Sergey Anatolievich Gorobets

Alan David Bennett

Liam Michael Parker

Yuval Shohet

Michael I Mallary

Alan L Sidman

Harold B Shukovsky

James Fitzpatrick

Robert W Ellis

Mark Joseph Dancho

The present disclosure generally relates to improving programming to data storage devices, such as solid state drives (SSDs). A first memory device has a first XOR element and a second memory device has a second XOR element. The ratio of the first XOR element to the capacity of the first memory device is substantially smaller than the ratio of the second XOR element to the capacity of the second memory device. A read verify operation to find program failures is executed on either a wordline to wordline basis, an erase block to erase block basis, or both a wordline to wordline basis and an erase block to erase block basis. Because the program failures are found and fixed prior to programming to the second memory device, the second XOR element may be decreased substantially.

TLC data programming with hybrid parity

A data storage device includes one or more memory devices that each includes one or more superblocks and a controller coupled to the one or more memory devices. Each superblock includes a plurality of wordlines. The controller is configured to write data to a first wordline of the plurality of wordlines, write data to a second wordline of the plurality of wordlines, perform a read verify operation on the first wordline, and perform a read verify operation on the second wordline. At least one of the first wordline and the second wordline does not include an XOR parity element and one or more wordlines of the plurality of wordlines includes the XOR parity element.

QLC data programming

A method of operation of a storage control system includes: determining a bit error rate of a page; calculating a slope based on the bit error rate; and adjusting a threshold voltage for the page based on the slope for reading a memory device.

Storage control system with data management mechanism and method of operation thereof

A process resulting in enhanced pole performance, relative to permalloy poles, in narrow track magnetic devices. A preferred process includes increasing the anisotropy field of the pole material while maintaining an acceptable coercivity level and near zero magnetostriction. One embodiment utilizes a NiCoFe alloy containing 22% cobalt by weight, heat treated in an easy axis magnetic field in a non-oxidizing atmosphere. This process achieves favorable domain structures at narrow pole tip widths.

Magnetic devices with enhanced poles

Process of forming magnetic devices with enhanced poles

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Westford, MA, United States of America

Michelle Martin