E.t.c. S.r.l.

Flexterra, Inc.

Other

Consiglio Nazionale Delle Ricerche

Tufts University

Universita′ Degli Studi Di Milano

Universita' Degli Studi Dell'insubria

Muccini, Michele

Michele Muccini

Raffaella Capelli

Stefano Toffanin

Gianluca Generali

Antonio Facchetti

Paul Heremans

Raymond Ziessel

Roland Schmechel

Massimo Zambianchi

Manuela Melucci

Laura Favaretto

Heinz Von Seggern

Aline Hepp

Holger Heil

Valentina Benfenati

Johan Lieven Hendrik Reynaert

Roberto Zamboni

Hakan Usta

Mitchell Denti

Andrea Stefani

Caterina Soldano

Viviana Biondo

David L Kaplan

Fiorenzo G Omenetto

Chung-Chin Hsiao

Yan Zheng

Jason Amsden

Wei Zhao

Carlo Taliani

Norberto Masciocchi

Hugh Lien

Johan Lieven Hendrik Yeynaert

Maria Antonietta Loi

Angelo Sironi

Guido Turatti

Mauro Riva

Xiaoyan Chen

Ricardo D'Alpaos

Riccardo D'ALPAOS

The present teachings relate to an organic electroluminescent transistor with improved light-emission characteristics. More specifically, the present organic electroluminescent transistor has an emissive ambipolar channel including at least one layer of an n-type semiconductor material, at least one layer of a p-type semiconductor material, and at least one layer of an emissive material arranged between the layers of the p-type and n-type semiconductor materials, where the multilayer emissive ambipolar channel includes, among various layers, a layer of a p-type semiconductor material comprising a benzothieno-benzothiophene compound, and/or a layer of an emissive material comprising a blend material that includes an organic carbazole derivative as the host matrix compound and an iridium complex as the guest emitter.

Organic electroluminescent transistor

The invention relates to improved Organic Light Emitting Transistor (OLET) pixel architecture for OLET based displays.

Display containing improved pixel architectures

The present teachings relate to a photopatternable composition including a vinylidene fluoride-based polymer, a photosensitive non-nucleophilic base, and a crosslinking agent. The photopatternable composition can be used to prepare a patterned thin film component for use in an electronic, optical, or optoelectronic device such as an organic thin film transistor. The patterned thin film component can be used as a gate dielectric with a high dielectric constant, for example, a dielectric constant greater than 10.

Photopatternable compositions, patterned high k thin film dielectrics and related devices

The present teachings relate to an organic electroluminescent transistor with improved light-emission characteristics. More specifically, the present organic electroluminescent transistor has an emissive ambipolar channel including at least one layer of an n-type semiconductor material, at least one layer of a p-type semiconductor material, and at least one layer of an emissive material arranged between the layers of the p-type and n-type semiconductor materials, with the n-type semiconductor material comprising an electron-transporting compound represented by formula (N-1): where X, Ar, Ar', R, R, m and m&#x2032; are as defined herein.

Novel compounds useful as organic semiconductor material are described. Semiconductor devices containing said organic semiconductor material are also described.

Organic semiconductor material

A novel compound useful as organic semiconductor material, and semiconductor devices containing such organic semiconductor material are described.

Compounds useful as organic semiconductor materials, and semiconductor devices containing such organic semiconductor materials are described.

An electroluminescence generating device comprising e. a channel of organic semiconductor material, said channel being able to carry both types of charge carriers, said charge carriers being electrons and holes; f. an electron electrode, said electron electrode being in contact with said channel and positioned on top of a first side of said channel layer or within said channel layer, said electron electrode being able to inject electrons in said channel layer; g. a hole electrode, said hole electrode being spaced apart from said electron electrode, said hole electrode being in contact with said channel and positioned on top of said first side of said channel layer or within said channel layer, said hole electrode being able to inject holes into said channel; h. a control electrode positioned on said first side or on a second side of said channel; whereby light emission of said electroluminescence generating device can be acquired by applying an electrical potential difference between said electron electrode and said hole electrode.

Organic electroluminescence generating devices

Compounds of formulae (I) and (II) useful as organic semiconductor materials, and semiconductor devices containing such organic semiconductor materials are described.

Thieno[2,3-C]Pyrrole-dione derivatives and their use for organic semiconductors

An organic electroluminescent transistor is described. The organic electroluminescent transistor has a first and a second dielectric layer, a first and a second control electrode and an assembly having a source electrode, a drain electrode and an ambipolar channel. The ambipolar channel has a first layer of semiconductor material, a second layer of semiconductor material and a layer of emissive material arranged between the first layer of semiconductor material and the second layer of semiconductor material. The source electrode and the drain electrode are both in contact with only one of the two layers of semiconductor material.

Electroluminescent organic double gate transistor

The invention relates to ecosustainable and biocompatible, low cost, ambient friendly electronic and optoelectronic devices, such as transistors and light-emitting transistors, made with silk fibroin or blended with other biopolymers, methods for fabrication and methods of using the silk-based electronics and optoelectronics. The silk-based electronics and optoelectronics can be implanted in vivo and in vitro for biomedical applications, such as for drug discovery or drug screening assays and devices. The silk-based devices may be used in the food industry and embedded in packaging for tracking and sensing, for security purposes or exploited as disposable not harmful for the environment efficient general electronic and optoelectronic devices.

Silk transistor devices

An electroluminescence generating device comprising a channel of organic semiconductor material, said channel being able to carry both types of charge carriers, said charge carriers being electrons and holes; an electron electrode, said electron electrode being in contact with said channel and positioned on top of a first side of said channel layer or within said channel layer, said electron electrode being able to inject electrons in said channel layer; a hole electrode, said hole electrode being spaced apart from said electron electrode, said hole channel and positioned on top of within said channel layer, said hole electrode being able to inject holes into said channel; a control electrode positioned on said first side or on a second side of said channel; whereby light emission of said electroluminescence generating device can be acquired by applying an electrical potential difference between said electron electrode and said hole electrode.

An organic ambipolar light emitting field effect transistor having an architecture with layers stacked one over the other, adapted to generate a diffused illumination is described. The transistor has a gate electrode, a dielectric layer superposed to the gate electrode, an ambipolar channel superposed to the dielectric layer having a P-type semiconductor layer whose energy band is determined by its highest occupied molecular orbital HOMO-SCand lowest unoccupied molecular orbital LUMO-SC, a N-type semiconductor layer whose energy band is determined by its highest occupied molecular orbital HOMO-SCand lowest unoccupied molecular orbital LUMO-SCand a light emitting layer adapted to allow recombination of charge carriers of opposite sign, interposed between the P-type semiconductor layer and the N-type semiconductor layer, whose energy band is determined by its highest occupied molecular orbital HOMO-R and lowest unoccupied molecular orbital LUMO-R, respectively; a source electrode adapted to inject charges of a first type and a drain electrode adapted to inject charges of a second type, said source electrode and drain electrode being in contract with a same layer of said P-type or N-type semiconductor layers, the other of said semiconductor layers being in contact with the dielectric layer.

Organic light emitting ambipolar field effect transistor with distributed light emission

The present invention relates to a device comprising an organic field effect transistor (OFET) with charge injecting contacts containing a semiconductor layer formed by a perylene derivative, to uses of said device as a medical sensor and/or as a medical cell stimulator and to methods of stimulating and/or monitoring biological cellular activity by using said device.

Platform comprising an organic field-effect transistor for biological and medical applications

An electroluminescent organic transistor is described. The electroluminescent organic transistor has a semiconductor heterostructure constituted by a plurality of layers of semiconductor materials of p-type and n-type, which act, respectively, for the conduction of holes and electrons within the heterostructure, and at least two layers of emitting materials each of which is interposed between, and in direct contact with, one of the layers of p-type semiconductor material and another one of the layers of n-type semiconductor material.

Growing community of inventors

Bologna, Italy

Michele Muccini