California Institute of Technology

A123 Systems LLC

Michele L Ostraat

Harry A Atwater

Richard C Flagan

Yet-Ming Chiang

Gilbert N Riley, Jr

Andrew L Loxley

Antoni S Gozdz

Richard K Holman

Michael S Viola

Benjamin Nunes

Elizabeth Boer

Lloyd D Bell, Ii

Electrodes for use in electrochemical devices are disclosed. More particularly coated electrode particles for use in solid electrochemical cells and materials and systems for improving electronic conductivity and repulsive force characteristics of an electrode network are disclosed. An article containing a plurality of distinct first particles that form an electrode network in which the distinct first particles are coated with a system of electrically conductive material is also disclosed. In some embodiments, the coating layer also includes a low refractive index material. In some embodiments, the coating layer of the electroactive material includes a plurality of second particles.

Coated electrode particles for composite electrodes and electrochemical cells

A process for forming an aerosol of semiconductor nanoparticles includes pyrolyzing a semiconductor material-containing gas then quenching the gas being pyrolyzed to control particle size and prevent uncontrolled coagulation. The aerosol is heated to densify the particles and form crystalline nanoparticles. In an exemplary embodiment, the crystalline particles are advantageously classified by size using a differential mobility analyzer and particles having diameters outside of a pre-selected range of sizes, are removed from the aerosol. In an exemplary embodiment, the crystalline, classified and densified nanoparticles are oxidized to form a continuous oxide shell over the semiconductor core of the particles. The cores include a density which approaches the bulk density of the pure material of which the cores are composed and the majority of the particle cores are single crystalline. The oxidized particles are deposited on a substrate using thermophoretic, electrophoretic, or other deposition means. The deposited particles form a stratum or discontinuous monolayer of oxidized semiconductor particles. In an exemplary embodiment, the stratum is characterized by a uniform particle density on the order of 10 to 10 particles/cm and a tightly controlled range of particle sizes. A plurality of adjacent particles contact each other, but the oxide shells provide electrical isolation between the particles of the stratum. Clean processing techniques provide a density of foreign atom contamination of less than 10 atoms/cm . The stratum is advantageously used as the floating gate in a non-volatile memory device such as a MOSFET. The non-volatile memory device exhibits excellent endurance behavior and long-term non-volatility.

Aerosol process for fabricating discontinuous floating gate microelectronic devices

A stratum or discontinuous monolayer of dielectric-coated semiconductor particles includes a high density of semiconductor nanoparticles with a tightly controlled range of particle sizes in the nanometer range. In an exemplary embodiment, the nanoparticles of the stratum are substantially the same size and include cores which are crystalline, preferably single crystalline, and include a density which is approximately the same as the bulk density of the semiconductor material of which the particle cores are formed. In an exemplary embodiment, the cores and particles are preferably spherical in shape. The stratum is characterized by a uniform particle density on the order of 10 to 10 particles/cm . A plurality of adjacent particles contact each other, but the dielectric shells provide electrical isolation and prevent lateral conduction between the particles of the stratum. The stratum includes a density of foreign atom contamination of less than 10 atoms/cm . The stratum is advantageously used as the floating gate in a non-volatile memory device such as a MOSFET. The non-volatile memory device including the discontinuous floating gate of semiconductor nanoparticles exhibits excellent endurance behavior and long-term non-volatility.

Aerosol silicon nanoparticles for use in semiconductor device fabrication

Growing community of inventors

Whitestation Station, NJ, United States of America

Michele L Ostraat