Stmicroelectronics S.r.l.

C.r.f. Societa Consortile Per Azioni

S.i.t.i. Di Basso S.r.l.

Michele Basso

Enrico Raffone

Stefano Corona

Marco Sambi

Claudio Rei

Leonardo Di Biccari

A structural body made of semiconductor material includes an active area housing a drain region, a body region and a source region within the body region. An electrical-isolation trench extends in the structural body to surround the active area. A first PN-junction and a second PN-junction are integrated in the structural body between the active area and the trench, respectively located on opposite sides of the active area. The first and the second PN-junctions form a first diode and a second diode, with each diode having a respective cathode electrically coupled to the drain region of the MOSFET device and a respective anode electrically coupled to the source region of the MOSFET device.

LDMOS device with integrated P-N junction diodes

Growing community of inventors

Cusano Milanino, Italy

Michele Basso