Agfa Gevaert Nv

Agfa-gavaert N.v.

Michel Werts

Luc H Leenders

Eddie R Daems

Information carrier precursor comprising a rigid sheet or support; a receiving layer configuration comprising at least one layer; and at least one substance, optionally provided pattern-wise, capable of and available for interacting in situ with at least one species diffusing through the receiving layer configuration to produce a functional species, wherein at least one layer of the receiving layer configuration comprises at least one pigment, at least one binder, opaque porous parts capable of being rendered substantially transparent by penetration by a lacquer provided at the outermost surface of the receiving layer configuration and non-porous transparent parts; a method for producing the above-mentioned information carrier precursor; a method for producing an information carrier; and information carriers produced therewith.

Information carrier precursor and information carrier produced therewith

Information carrier precursor comprising a rigid sheet or support; a receiving layer configuration comprising at least one layer; and at least one substance, optionally provided pattern-wise, capable of and available for interacting in situ with at least one species diffusing through the receiving layer configuration to produce a functional species, wherein at least one layer of the receiving layer configuration is opaque, porous, has the capability of being rendered substantially transparent by penetration by a lacquer provided at the outermost surface of the receiving layer configuration and comprises at least one pigment and at least one binder; a method for producing the above-mentioned information carrier precursor; a method for producing an information carrier; and information carriers produced therewith.

A first passive ferroelectric memory element comprising a first electrode system and a second electrode system, wherein said first electrode system is at least partly insulated from said second electrode system by an element system comprising at least one ferroelectric element, wherein said first electrode system is a conductive surface, or a conductive layer; wherein said second electrode system is an electrode pattern or a plurality of isolated conductive areas in contact with, for read-out or data-input purposes only, a plurality of conducting pins isolated from one another.

Ferroelectric passive memory cell, device and method of manufacture thereof

Passive memory devices comprising a support having at least one conductive surface or surface layer and having on at least one side of the support a passive memory element, the passive memory element comprising a first electrode system, an insulating system and a second electrode system, wherein the first electrode system is insulated from the second electrode system, wherein the first electrode system is a conductive surface, or a conductive layer of a support, the second electrode system is a plurality of isolated conductive areas and/or a plurality of conducting pins isolated from one another; and conductive bridges are present between at least one of the isolated conductive area, or at least one of the conducting pins, and the first electrode system; wherein with the exception of the first electrode system being a conductive surface of a support, the systems and the conductive bridges are printable using conventional printing processes.

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Antwerp, Belgium

Michel Werts