Axcelis Technologies, Inc.

Other

Michel Pharand

Ari Eiriksson

Marvin Raymond LaFontaine

Richard Gueler

Victor M Benveniste

Peter Lawrence Kellerman

Robert J Mitchell

Dale K Stone

Klaus Becker

Ashwin Madhukar Purohit

Steven Dana Weed

Klaus Petry

Allan D Weed

Donovan Beckel

Joseph Foley

Thomas L Durant

Michael R Mitrano

Wayne Arseneault

Shantanu Pathak

Dennis Normandin

A combination load lock apparatus is provided, wherein a chamber is coupled to two or more valves in selective fluid communication with two or more respective volumes. A support member for supporting a workpiece is disposed within an interior portion of the chamber, wherein a translation apparatus is operably coupled thereto. The translation apparatus is operable to rotate and/or translate the workpiece on the support member about and/or along a first axis, wherein a detection apparatus associated with the chamber is operable to detect one or more characteristics of the workpiece during the rotation and/or translation thereof. The workpiece may be further rotated in a predetermined manner based on the one or more detected characteristics. A recess is further defined in the interior portion of the chamber, wherein the translation apparatus is operable to translate the workpiece into and out of the recess to reduce particulate contamination thereon.

Combination load lock for handling workpieces

An ion implantation apparatus, system, and method are provided for connecting and disconnecting a workpiece holder from a scan arm. A twist head is provided, wherein an electrostatic chuck is operable to be mounted, wherein one or more rotating and non-rotating members associated with one or more of the twist head and electrostatic chuck have one or more dynamic electrical and fluid rotary connections associated therewith. The electrostatic chuck is further operable to be removed from the twist head without disconnecting the one or more dynamic fluid seals.

Workpiece handling scan arm for ion implantation system

An electrostatic clamp for securing a semiconductor wafer during processing. The electrostatic clamp includes a base member, a first dielectric layer, a second dielectric layer having a gas pressure distribution micro-groove network formed therein, a gas gap positioned between a backside of a semiconductor wafer and the second dielectric layer, and a pair of high voltage electrodes positioned between the first dielectric layer and the second dielectric layer.

High-performance electrostatic clamp comprising a resistive layer, micro-grooves, and dielectric layer

A vertical rapid thermal processing system includes a processing chamber and an elevator structure providing for vertical movement of a workpiece within the processing chamber. The elevator structure includes a workpiece support for supporting the workpiece and an elevator shaft coupled to the workpiece support and extending externally from the processing chamber. An end portion of the elevator shaft, external to the processing chamber, has a selected magnetic polarity. The elevator structure also includes moveable carriage coupled to the shaft to provide vertical movement of the workpiece within the processing chamber. The carriage includes a shaft support having the selected polarity. The shaft support is positioned adjacent the polarized end portion of the elevator shaft such that repulsive magnetic forces maintain a gap between the end portion of the elevator shaft and the shaft support as the shaft support and elevator shaft move vertically along a path of travel.

Magnetic support structure for an elevator tube of a vertical rapid thermal processing unit

A workpiece is supported on a gas cushion to reduce mechanical stresses on the workpiece during processing. A plenum having a workpiece support flange for receiving the workpiece is connected to a gas supply. When gas flows into the plenum and pressure increases sufficiently to lift the workpiece, the workpiece is lifted and the gas flows out of the plenum between the flange and the workpiece edge. The workpiece is thus supported above the flange by the gas during processing.

Uniform gas cushion wafer support

A wafer support position control mechanism selectively positions a semiconductor wafer along an axis of excursion within a process chamber. An elevator tube protrudes through an orifice in the chamber surface and is connected at a first distal end to the wafer support. A compliant, dynamic seal within the orifice engages the elevator tube to form a gas curtain within a gap between the seal and the elevator tube to seal the process chamber. A moveable carriage is connected to the elevator tube at a second distal end for moving the wafer support along the axis of excursion. Rigid mechanical structure couples the second distal end of the elevator tube to the moveable carriage.

Apparatus for positioning an elevator tube

The invention provides a wafer pad assembly and actuation system for use in an ion implanter, preferably a batch-type ion implanter. The wafer pad assembly includes a rotatable wafer support pad having an upper surface for mounting the wafer, and a lower surface rotationally mounted to a housing of the wafer pad assembly. The lower surface of the wafer support pad further comprises a flange connected to a rotatable shaft. The shaft is connected to an actuator for selectively indexing the shaft so that the wafer support pad is rotationally indexed about its geometric center. The lower surface of the wafer support pad is also connected to a frame having an outer curved surface rotatably mounted within a mating bearing surface of a housing. The curved frame is connected to a plurality of linkages for moving the wafer support pad within the curved frame so that the wafer is pivotable or tiltable about its geometric center.

Wafer pedestal tilt mechanism

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Chelmsford, MA, United States of America

Michel Pharand