Commissariat a L'energie Atomique

Michel Montier

Jacques Lacour

Georges Guernet

Jean-Pierre Suat

Giorgio Frossati

Daniel Thoulouze

Jean Bernard

Louise Peccoud Nee Toupillier

The measuring detector is constituted by the resistance of a given volume of doped semiconductor, there being formed on one face of a semiconducting monocrystal a surface region having a well-determined thickness and a well-determined concentration of doping ions and two electrical contacts at the extremities of said region. The doped surface region is obtained by ion implantation and there is formed on the second face of the monocrystal a metallic coating which has good thermal conductivity and is in good thermal contact with said second face. The detector is primarily applicable to thermometric measurements at very low temperatures below 1.degree. K.

Measuring detector and a method of fabrication of said detector

The method of isolating integrated circuit components on a conductive silicon wafer having a deep layer isolated from a surface layer consists in forming a first deposit of low density on each surface zone in which an integrated circuit component is to be implanted while leaving an uncoated strip which separates each deposit from adjacent deposits, in forming a channel corresponding to each strip within the surface layer and partly within the deep layer, in performing selective deposition of silica on the entire wafer so as to fill the channels up to the bottom of the first deposits, and in removing the first deposits so as to leave insulating silica walls around the surface zones.

Method for isolating the components of an integrated circuit

A method for manufacturing integrated circuits, said method comprising the steps of:

Method for manufacturing integrated circuits

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Meylan, France

Michel Montier