H.e.f.

Michel Martin

Philippe Maurin-Perrier

Olivier Blandenet

Christophe Heau

Frederic Faverjon

Frédéric Faverjon

A cathode sputtering target includes: between 30 and 40 atomic % of a metal, between 2 and 10 atomic % of nitrogen, and between 35 and 50 atomic % of oxygen. The remainder up to 100% is constituted by at least one element selected from the group that comprises phosphorous (P), boron (B), silicon (Si), germanium (Ge), gallium (Ga), sulphur (S) and aluminium (Al). Also provides a method of manufacturing a thin film from the target, and an electrochemical device comprising the thin film.

Oxynitride sputtering target

According to the method, drops of an adhesive material are deposited on one of the plates, with the drops being spaced from one another. A grid having a predefined thickness lower than that of the drops is applied to the plate receiving the drops. A perpendicular and uniform pressure is applied to at least one of the plates, so that the drops spread and come into contact with the opposing sides of the two plates. The spacing of the drops is defined so that after spreading under the pressure applied, air is not trapped between the drops.

Method for assembling at least two plates and use of the method for preparing an ion beam sputtering assembly

A titanium-copper-nickel based alloy is used for the formation of at least one resistive thin film on a polymer substrate. The alloy comprises 50 to 80% by weight of titanium, 10 to 25% by weight of copper and 10 to 25% by weight of nickel. The thin film has a thickness between about 100 and 160 nanometres.

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Septeme, France

Michel Martin