Thomson-csf

Michel Laviron

Henri Derewonko

Joel Lepage

A process allowing the position and the dimensions of the grid of a field-effect transistor as well as the gaps between source and grid, grid and drain to be fixed as early as the first masking operation. To this end, a mask is formed comprising source, grid and drain windows by using a first insulating or semi-insulating material then the three windows are filled by means of a second material. The ohmic source and drain contacts are deposited in the corresponding windows reopened by selective etching of the second material effected after masking the first part of the layer situated above the non-reopened window. Second selective etching after masking of the contacts allows a Schottky-type grid contact to be deposited.

Process for producing a self-aligned grid field-effect transistor

A component of the 'hybrid-circuit' type comprising an active component, such as a very-high-frequency field-effect transistor, and a sealed housing, intended for operating as an amplifier in a large frequency band, in the range from 1 to 20 Gc/s. In this hybrid component, are accomodated in the same housing, by using in particular the ceramic elements of the base situated on the periphery of an earth return aperture containing the active component, metallizations forming lines having distributed constants. Moreover, to obtain a low standing-wave ratio on these lines, lumped circuit elements are placed inside the housing in the closest vicinity of the active component.

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Paris, France

Michel Laviron