Applied Materials, Inc.

Michel Khoury

Michael Patrick Chudzik

Max Batres

Lan Yu

Exemplary processing methods of forming a semiconductor structure may include forming subpixels on a substrate. Each of the subpixels may include a gallium-and-nitrogen-containing layer formed on an exposed portion of a nucleation layer on the substrate. The subpixels may further include a porosified region formed on or in the gallium-and-nitrogen-containing region, and an active region formed on the porosified region. The active region may include an indium-gallium-and-nitrogen-containing material. The processing methods may further include forming a first reflection layer around one of the subpixels, wherein the first reflection layer includes a first metal layer. The methods may additionally include forming a second reflection layer around another of the subpixels, wherein the second reflection layer includes a second metal that is different than the first metal.

Indium-gallium-nitride light emitting diodes with light reflecting mirrors

Exemplary processing methods of forming a semiconductor structure may include forming a nucleation layer on a semiconductor substrate. The methods may further include forming first, second, and third, gallium-and-nitrogen-containing regions on the nucleation layer. The first gallium-and-nitrogen-containing region may be porosified, without porosifying the second and third gallium-and-nitrogen containing regions. The methods may still further include forming a first active region on the porosified first gallium-and-nitrogen-containing region, and a second active region on the unporosified second gallium-and-nitrogen-containing region. The methods may yet also include forming a third active region on the unporosified third gallium-and-nitrogen-containing region.

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Santa Barbara, CA, United States of America

Michel Khoury