Thomson-csf

Michel Heitzmann

Raymond Henry

Marianne Boudot

Gilles Sillard

Jean V Bouvet

The invention provides a process for mounting an ultra-high frequency diode so as to form a pre-matched module. The module of the invention comprises a copper base, a quartz ring and a copper cover: these three parts, coated with gold at least on their facing faces, are assembled together by thermocompression. Inside this case, the diode chip, soldered to the base via a gold heat sink is biased by a false 'beam-lead' connection, a metal star whose arms are curved, which reduces the inductance and capacity of this connection with respect to the base. The false 'beam-lead' is formed by metalizing a mesa obtained on a silicon wafer.

Pre-matched module for an ultra-high frequency diode and a process for

A millimetric electromagnetic waves switch is constituted by a ridged waveguide associated to a PIN diode of which the layers P.sup.+ and N.sup.+ are very thin, of about 2 to 5 microns thickness. The width of the diode is inferior to that of the ridged part of the guide and its dimension according to the longitudinal axis of the guide is a multiple of the half-length of the guided wave.

Pin diode switch mounted in a ridge waveguide

A high-power limiter comprising silicon PIN diodes for millimeter waves is formed by a waveguide associated with a silicon substrate wherein is formed a matrix of PIN diodes. The PIN diodes are formed throughout the thickness of the silicon substrate.

High-power waveguide limiter comprising PIN diodes for millimeter waves

A pre-matched module is provided for an ultra-high frequency diode with high heat dissipation, comprising a diode chip biassed by a connection and mounted inside a case formed by a metal base, a quartz ring and a metal cap. The base of the case comprises two fixed and metal-coated diamonds one of which has dimensions very much greater than those of the other central diamond, these two diamonds allowing the heat released by the diode to be removed to a maximum and allowing the cap to provide, because of its dimensions and those of the diamond and of the ring, good radial impedance transformation.

Pre-matched module for an ultra-high frequency diode with high heat

In a method of fabrication of a module formed by a semiconductor diode which oscillates in millimeter waves and by a variable-capacitance diode, the oscillating diode is mounted on a pedestal at the center of a support base. A ring of fused silica for supporting a metallic disk of predetermined diameter serves to form a radial space between two metallic surfaces with a view to readily obtaining oscillation in a predetermined frequency band. A similar ring is welded at one end to the opposite face of the disk and at the other end to another metallic base fitted with a central variable-capacitance diode. Flexible connections bonded to the diodes are clamped between the rings and the disk. The module may be incorporated in a tunable oscillator.

Method of fabricating a varactor/oscillator diode module for a tunable

The impedance value of the semiconductor device usable at very high frequencies is preset during manufacture. The device comprises a Gunn or Zener diode coupled to a coaxial line. The central conductor of the line is constituted by a metal wire mandrel or a metal coating deposited on a glass fibre section. The outer cylinderical conductor is a cylindrical metal coating deposited on a ring of dielectric material, such as glass and which surrounds the diode. Application to microstrip, transmitting antenna and radial cavity circuits.

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Paris, France

Michel Heitzmann