Centre National De La Recherche Scientifique

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Michel El Khoury Maroun

Guy Feuillet

Jesus Zuniga Perez

Philippe Vennegues

A method making it possible to obtain, on an upper surface of a crystalline substrate, a semipolar layer of nitride material comprising any one from among gallium, aluminium or indium, the method comprises the following steps: obtaining, on the upper surface of the crystalline substrate, a plurality of parallel grooves which extend in a first direction, one of the two opposite facets exhibiting a crystal orientation; etching a plurality of parallel slices which extend in a second direction that has undergone a rotation with respect to the first direction of the grooves in such a way as to obtain individual facets exhibiting a crystal orientation; epitaxial growth of the material from the individual facets.

Method making it possible to obtain on a crystalline substrate a semi-polar layer of nitride obtained with at least one of the following materials: gallium (Ga), indium (In) and aluminium (Al)

A method is provided for obtaining a semi-polar nitride layer obtained from a gallium and nitrogen based material on an upper surface of a crystalline substrate of cubic symmetry, including: etching parallel grooves from the upper surface having two opposed inclined facets, one having a crystalline orientation &#x3c;111&#x3e;; forming a mask above the upper surface such that the facets having &#x3c;111&#x3e; orientation are not masked; and then forming the layer by epitaxial growth from the non-masked facets, including: a first epitaxial growth phase to form a seed in parallel grooves; interrupting the first phase when the seed has an inclined facet having a crystalline orientation 0001 and an upper facet having a crystalline semi-polar orientation 101; a surface treatment step including modifying an upper portion of the seed to include silicon; and a second epitaxial growth phase from the inclined facet, continuing until coalescence of seeds of adjacent parallel grooves.

Method of making a semi-polar nitride layer on a crystalline substrate

A process allowing at least one semipolar layer of nitride to be obtained, which layer is obtained from a least one among gallium, indium and aluminum on a top surface of a single-crystal layer based on silicon, wherein the process comprises the following steps: etching, from the top surface of the single-crystal layer, a plurality of parallel grooves comprising at least two opposite inclined facets, at least one of two opposite facets having a crystal orientation; masking the top surface of the single-crystal layer such that the facets having a crystal orientation are not masked; and epitaxial growth of the semipolar layer of nitride from the not masked facets; wherein the etching is carried out on a stack comprising the single-crystal layer and at least one stop layer that is surmounted by the single-crystal layer and wherein the etching etches the single-crystal layer selectively with respect to the stop layer so that the etching stops on contact with the stop layer.

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Antibes, France

Michel El Khoury Maroun