International Business Machines Corporation

Globalfoundries Inc.

Michel Despont

Peter Vettiger

Ute Drechsler

Laurent A Dellmann

Mark Alfred Lantz

Urs T Duerig

Daniel Grogg

Bert Jan Offrein

Gerd K Binnig

Stefano Sergio Oggioni

Bernd W Gotsmann

Christoph Hermann Hagleitner

Thomas R Albrecht

Abu Sebastian

Hugo Eric Rothuizen

Harish Bhaskaran

Yu Pu

Robert G Biskeborn

James L Hedrick

Robert Dennis Miller

Bruno Michel

Thomas J Brunschwiler

Craig Jon Hawker

Armin W Knoll

Thomas E Morf

Philipp Herget

Danny Elad

Pierre-Olivier Jubert

Jane Elizabeth Frommer

Roger F Dangel

Dan Corcos

Evangelos Stavros Eleftheriou

Charalampos Pozidis

Giovanni Cherubini

Roy Rongqing Yu

H Bernhard Pogge

Roy H Magnuson

Walter Haeberle

Johannes Georg Bednorz

Lukas Kull

David J Webb

Dorothea W Wiesmann Rothuizen

Christophe P Rossel

Peter Baechtold

Roland M Guerre

Emmanuel Delamarche

Wayne Isami Imaino

Chandrasekhar Narayan

Chandrika Prasad

David Berman

Mehmet Soyuer

Peter VanderSalm Koeppe

Benny Sheinman

Gian-Luca Bona

Deepak Ranjan Sahoo

Christoph E Gerber

Elad Koren

Reto R Schlittler

Matthias Geissler

Urs T Durig

Venkataraman Kartik

Walter Haberle

Mark I Lutwyche

Ernst Meyer

Graham Cross

Gerd K Binning

Roland W Widmer

Juergen Brugger

Mark A Lantz

Grégoire Genolet

Urs T Dürig

Roland Bennewitz

The present invention provides an integrated electro-mechanical actuator and a manufacturing method for manufacturing such an integrated electro-mechanical actuator. The integrated electro-mechanical actuator comprises an electrostatic actuator gap between actuator electrodes and an electrical contact gap between contact electrodes. An inclination with an inclination angle is provided between the actuator electrodes and the contact electrodes. The thickness of this electrical contact gap is equal to the thickness of a sacrificial layer which is etched away in a manufacturing process.

Integrated electro-mechanical actuator

A nano-electromechanical switch and a method for designing a nano-electromechanical switch. The nano-electromechanical switch includes at least one actuator electrode and a curved cantilever beam. The curved cantilever beam is adapted to flex in response to an activation voltage applied between the actuator electrode and the curved cantilever beam to provide an electrical contact between the curved cantilever beam and an output electrode of the nano-electromechanical switch. Before, during and after the curved cantilever beam flex in response to the activation voltage, a remaining gap between the curved cantilever beam and the actuator electrode is uniform.

Nano-electromechanical switch

A method and circuit for determining a working temperature of a device, the method comprising: providing a first signal to a device having a temperature-sensitive characteristic; performing a function on the first signal by the device; demodulating a second signal output by the device to obtain a third signal thus generating a signal having reduced 1/f noise component; and based upon the first signal and the second signal, determining a working temperature of the device.

Modulation methods for CMOS-based thermal sensors

A dynamic logic gate includes a nano-electro-mechanical-switch, preferably a four-terminal-nano-electro-mechanical-switch. The invention further refers to dynamic logic cascade circuits comprising such a dynamic logic gate. In particular, embodiments of the invention concern dynamic logic cascade circuits comprising single or dual rail dynamic logic gates.

Nano-electro-mechanical-switch adiabatic dynamic logic circuits

In one general embodiment, a method is provided for fabricating magnetic structures using post-deposition tilting. A thin film magnetic transducer structure is formed on a substantially planar portion of a substrate such that a plane of deposition of the thin film transducer structure is substantially parallel to a plane of the substrate. Additionally, the thin film transducer structure is caused to tilt at an angle relative to the plane of the substrate. The thin film transducer is fixed at the angle after being tilted.

Methods for fabricating magnetic transducers using post-deposition tilting

The present invention is directed to a nanoelectromechanical (NEM) switch comprising two electrodes (), wherein: at least one () of the electrodes comprises an active layer () thereon; and at least one () of the electrodes is movable along a given direction (z), from a: non-contact position to a contact position where one of the electrodes contacts the other one () of the electrodes, at the level of a contact point (P); and the active layer exhibits a conductive pathway (), which pathway: extends along said given direction (z) to enable electrical conduction from one of the electrodes to the other one of the electrodes in the contact position; and is confined to a given region (R) of the active layer, the region having nanoscale dimensions in a sectional plane (x, y) perpendicular to the given direction. The present invention is further directed to related devices, systems and methods.

Nanoelectromechanical switch with localized nanoscale conductive pathway

The present invention is notably directed to an electromechanical switching device having: two electrodes, including: a first electrode, having layers of a first 2D layered material, which layers exhibit a first surface; and a second electrode, having layers of a second 2D layered material, which layers exhibit a second surface vis-&#xe0;-vis said first surface; and an actuation mechanism, where: each of the first and second 2D layered materials is electrically conducting; and at least one of said two electrodes is actuatable by the actuation mechanism to modify a distance between the first surface and the second surface, such as to modify an electrical conductivity transverse to each of the first surface and the second surface and thereby enable current modulation between the first electrode and the second electrode.

Electromechanical switching device with 2D layered material surfaces

An improved alignment precision of Micro-Electromechanical Systems (MEMS). A method includes two parts of MEMS separated by at least one rolling element having a first diameter, where the rolling element is maintained on one of the two parts using a thermally dissipative material, horizontally aligning the two parts by pivoting one of the two parts about the rolling element, and locking the two parts together.

Method and system for improving alignment precision of parts in MEMS

Techniques for producing a flexible structure attached to a device. One embodiment includes the steps of providing a first substrate, providing a second substrate with a releasably attached flexible structure, providing a bonding layer on at least one of the first substrate and the flexible structure, adjoining the first and second substrate such that the flexible structure is attached at the first substrate by means of the bonding layer, and detaching the second substrate in such a way that the flexible structure remains on the first substrate.

Method for attaching a flexible structure to a device and a device having a flexible structure

A nano-electro-mechanical switch includes an input electrode, a body electrode, an insulating layer, an actuator electrode, an output electrode, and a cantilever beam adapted to flex in response to an actuation voltage applied between the body electrode and the actuator electrode. The cantilever beam includes the input electrode, the body electrode and the insulating layer, the latter separating the body electrode from the input electrode, the cantilever beam being configured such that, upon flexion of the cantilever beam, the input electrode comes in contact with the output electrode at a single mechanical contact point at the level of an end of the cantilever beam.

Four terminal nano-electromechanical switch with a single mechanical contact

A THz radiation detector comprising a vertical antenna separated from a suspended platform by an isolating thermal air gap for concentrating THz radiation energy into a smaller suspended MEMS platform upon which a thermal sensor element is located. THz photon energy is converted into electrical energy via a thermally isolated air gap between plates of a coupling capacitor separated by a plurality of nano-tip spacers that determine the gap distance. The capacitor couples energy from the antenna to the thermal sensor.

Nano-tip spacers for precise gap control and thermal isolation in MEMS structures

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Au, Switzerland

Michel Despont