Semtech Corporation

Semtech International Ag

Csem

Michel Chevroulet

Olivier Nys

Daniel Aebischer

Gregoire Guye

A semiconductor device measures a state of a MEMS as a first voltage variation at a sensing node. The state of the MEMS includes a capacitance. A first capacitor is coupled between the sensing node and an input of an integrator for transferring the first voltage variation to a second node as a first signal. A second voltage variation is routed through a second capacitor to the second node as a second signal. The integrator integrates the first signal and second signal to provide an integrated signal. An ADC has an input coupled to an output of the integrator and converts the integrated signal to a digital signal representative of the capacitance of the MEMS. A DAC has an input coupled to the output of the ADC. A second capacitor is coupled between an output of the DAC and the sensing node.

Semiconductor device and method of direct measurement and acquisition of MEMS employing sigma-delta loop

Described herein are systems and methods that facilitate the measurement of the capacitance of high voltage devices while shielding an active device involved in the measurement from the high voltage. The systems and methods employ capacitors to store the high voltage such that the active device does not experience the high voltage. Placement of a reset device ensures that the active device is shielded from the high voltage.

Capacitance measurement of high voltage device

A charge pump circuit includes a substrate and first well region formed in the substrate. A first transistor includes first and second conduction regions disposed in the first well region. A second well region is formed in the substrate. A third well region is formed within the second well region. A second transistor includes first and second conduction regions disposed in the third well region. The second well region and third well region are coupled to a common terminal. The common terminal receives a local potential and the first well region and second well region are commonly maintained at the local potential. The first transistor and second transistor operate within the charge pump cell. A plurality of charge pump cells can be cascaded together with an output of a first charge pump cell coupled to an input of a second charge pump cell.

Semiconductor device and method of preventing latch-up in a charge pump circuit

Circuit and method for controlling a liquid crystal segment () display wherein the shape of the control signals of the segments (e, e, b, b) is adapted according to a supply voltage (Vdd) so as to compensate at least partially the opacity variations caused by the supply voltage variations.

Circuit and method for controlling a liquid crystal segment display

Electronic circuit designed to control the level of lighting produced by light diodes in a flat screen. The circuit uses a PDM modulator in order to generate a control signal (Vc) with a number of pulses by period that depends on the desired level of lighting. The advantage is to reduce the energy in the low frequencies.

Method and device for controlling the backlighting of a flat screen

A data communication circuit comprising a slave device (3), a master device (2) and a two-wire bus (6) wherein the master device (2) creates a potential difference (V(t)) between the two wires so as to provide power to the slave device (3). The slave device (3) comprises a pulse decoder (20) for detecting the pulses and producing a synchronisation signal (Clk) upon the detection of each pulse. The master device (2) also comprises a pulse control circuit (40) for causing the pulse creating circuit to create a series of data pulses having the same state when the digital information is read from the slave device (3). In addition, the slave device (3) further comprises a circuit (43,58) for changing the state of selected ones of the data pulses in the series in response to the digital information to be read.

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Neuchatel, Switzerland

Michel Chevroulet