Agere Systems Guardian Corp.

Other

At+t Corp.

At&t Bell Laboratories

Bell Telephone Laboratories

American Telephone & Telegraph Co., At&t Bell Laboratories

At&t Technologies, Inc.

Michal Edith Gross

Gary L Wolk

Georgia J Fisanick

Sungho Jin

Hareesh Mavoori

Martin L Green

Ainissa G Ramirez

Abraham Katzir

John Eric Bower

Donald K Atwood

Christoph Lingk

Catherine E Rice

A device for use in a micro-electro-mechanical system (MEMS) optical device. The device includes a substrate having opposing first and second sides and a diffusion barrier layer formed over at least the first side. The device further includes a light reflective optical layer formed over the diffusion barrier layer on the first side of the substrate. The second side may desirably have a stress balancing layer located thereover.

Device having a barrier layer located therein and a method of manufacture therefor

The specification describes interconnection techniques for interconnecting large arrays of micromechanical devices on a silicon platform. Interconnections are routed through vias extending through the thickness of the substrate. The vias are formed by etching holes through the silicon wafer, depositing an insulating layer on the sidewalls of the holes, depositing a barrier layer on the insulating layer, electrolytically depositing a metal selected from the group consisting of copper and nickel to form via plugs in the holes, and depositing another barrier layer over the via plugs. It is found that electrolytic deposition will successfully plug the holes even when the aspect ratio of the through holes is greater than four and the hole diameter less than 100 microns.

Plated through hole interconnections

A process for fabricating a semiconductor device with copper interconnects is disclosed. In the process of the present invention, a layer of dielectric material is formed on a substrate. A barrier layer to prevent copper diffusion is then deposited over the entire surface of the substrate. A dual copper layer is formed on the barrier layer. The dual layer has a copper layer deposited by PVD and a copper layer deposited by electroplating. The copper layers are adjacent to each other. The ratio of the thickness (X) of the electroplated, layer to the thickness of the PVD layer (Y) is about 1:0.5 to about 1:2. The thickness of the electroplated layer is at least about 3 &mgr;m. The thickness of the PVD copper layer is at least about 100 nm. The thickness of the two layers is selected to effect recrystallization of the electroplated copper from a small grain size (0.1 &mgr;m to 0.2 &mgr;m) to a large grain size (1 &mgr;m or greater).

Process for semiconductor device fabrication having copper interconnects

A process for fabricating a semiconductor device with copper interconnects is disclosed. In the process of the present invention, a layer of dielectric material is formed on a substrate. At least one recess is formed in the layer of dielectric material. Barrier layers and seed layers for electroplating are then deposited over the entire surface of the substrate. The recess is then filled with copper by electroplating copper over the surface of the substrate. The electroplated copper has an average grain size of about 0.1 &mgr;m to about 0.2 &mgr;m immediately after deposition. The substrate is then annealed to increase the grain size of the copper and to provide a grain structure that is stable over time at ambient conditions and during subsequent processing. After annealing, the average grain size of the copper is at least about 1 &mgr;m in at least one dimension. The copper that is electroplated on the dielectric layer is then removed using an expedient such as chemical mechanical polishing. The copper that remains is the copper in the recess.

Disclosed is a method for forming a superconductive oxide layer on a substrate. The method comprises applying a precursor solution to a major surface of the substrate such that a metal-containing layer is formed on the surface, and heat treating the substrate/layer combination such that at least a substantial portion of the layer material is transformed into superconductive oxide. Exemplarily, the precursor solution is formed by dissolving Ba--, Y--, and Cu-containing compounds in acetic acid and water, spinning the solution on a MgO substrate, driving of unwanted constituents of the resulting layer at 400.degree. C., heating the combination to about 830.degree. C. in O.sub.2 such that the (perovskite) phase that is associated with superconductivity in YBa.sub.2 Cu.sub.3 O.sub.7 is formed, and oxygenating the layer at about 400.degree. C. in O.sub.2.

Method of producing a layer of superconductive oxide

A process of radiation-induced formation of a uniform metal or metal oxide region suitable for device application or for repairing transparent defects in pattern metal films of lithographic masks has been found. The process requires that the heat evolved during the radiation-induced reactions be carefully limited to produce the desired uniformity.

Method of forming metal regions

Metallization of integrated devices using ruthenium as a metallization material results in well-adhering contacts to source and drain regions as well as to gate oxide. Ruthenium is similarly suited as a diffusion barrier metallization between, e.g., silicon and aluminum and as an interconnection metallization material. And, as a diffusion barrier material, ruthenium dioxide may be used.

Metallization for integrated devices

A process of laser-induced metal deposition for repairing transparent defects (18) in patterned metal films (14) of photomasks (10). The process comprises the steps of (a) coating the surface (16) of the substrate (12) having the film (14) thereon with a layer of metal-organic compound (50); (b) exposing the portions of the layer of metal-organic compound (50) overlying the defects (18) to a beam (24) of electromagnetic radiation from a laser (22); (c) ramping the power level of the radiation beam (24) delivered by the laser (22) until a metal patch (52) is reflective and adherent is formed; and (d) removing the unexposed portions of metal-organic compound (50) remaining on the substrate surface (16).

Growing community of inventors

Summit, NJ, United States of America

Michal Edith Gross