Novellus Systems Incorporated

Lam Research Corporation

Applied Materials, Inc.

Michal Danek

Raashina Humayun

Anand Chandrashekar

Juwen Gao

Deqi Wang

Esther Jeng

Hanna Bamnolker

Robert T Rozbicki

Joshua Collins

Erich R Klawuhn

Sanjay Gopinath

Shruti Vivek Thombare

Patrick A Van Cleemput

Chiukin Steven Lai

Aaron R Fellis

Lawrence Schloss

Sean C Chang

Mei Yin Chang

Feng Chen

Ronald Allan Powell

Avi Tepman

Ashok K Sinha

Jun Zhao

Kaihan Abidi Ashtiani

Charles N Dornfest

Lee Luo

Talex Sajoto

Stefan A Wolff

Xiaolan Ba

Marvin De-Dui Liao

Alex Schreiber

Jeong-Seok Na

Sema Ermez

Kapil Umesh Sawlani

Bart Jan Van Schravendijk

Ivo Johannes Raaijmakers

Karl Anthony Littau

Roderick Craig Mosely

Karl B Levy

David C Smith

Siew Neo

Gorun Butail

Chyi Chern

Adam Jandl

Jonathan David Reid

Eric H Lenz

Samantha SiamHwa Tan

Ishtak Karim

Keren Jacobs Kanarik

Nerissa Sue Draeger

Wenbing Yang

Atashi Basu

David M Fried

Wei Lei

Michael J Wood

Anil Justin Vijayendran

Michael Rumer

Lakshminarayana Nittala

Teh-Tien Su

Griffin John Kennedy

Ilanit Fisher

Adrien Lavoie

Eric Andrew Englhardt

Shankar Swaminathan

Wai-Fan Yau

Reza Arghavani

Jon Henri

Ramesh Chandrasekharan

Victor Y Lu

Richard Alan Gottscho

David Charles Smith

Eliot K Broadbent

Dale R Dubois

Feng Wang

Keith J Hansen

Gary B Lind

Tsung-Han Yang

Keith B Wells

Vishal Gauri

Alan F Morrison

Brian Lu

Lana Hiului Chan

Francisco J Juarez

Sesha Varadarajan

Alexander Dulkin

William T Lee

Shane Tang

Mukul Khosla

Novy Sastrawati Tjokro

Tom Mountsier

Jason Daejin Park

Bart K Van Schravendijk

Ron Powell

Dongyao Li

Rajkumar Jakkaraju

Yeh-Jen Kao

Do Young Kim

Ruopeng Deng

Michael Bowes

Tianhua Yu

Described herein are methods of filling features with tungsten, and related systems and apparatus, involving inhibition of tungsten nucleation. In some embodiments, the methods involve selective inhibition along a feature profile. Methods of selectively inhibiting tungsten nucleation can include exposing the feature to a direct or remote plasma. In certain embodiments, the substrate can be biased during selective inhibition. Process parameters including bias power, exposure time, plasma power, process pressure and plasma chemistry can be used to tune the inhibition profile. The methods described herein can be used to fill vertical features, such as in tungsten vias, and horizontal features, such as vertical NAND (VNAND) wordlines. The methods may be used for both conformal fill and bottom-up/inside-out fill. Examples of applications include logic and memory contact fill, DRAM buried wordline fill, vertically integrated memory gate/wordline fill, and 3-D integration using through-silicon vias.

Tungsten feature fill with nucleation inhibition

Provided herein are methods and apparatuses for reducing line bending when depositing a metal such as tungsten, molybdenum, ruthenium, or cobalt into features on substrates by periodically exposing the feature to nitrogen, oxygen, or ammonia during atomic layer deposition, chemical vapor deposition, or sequential chemical vapor deposition to reduce interactions between metal deposited onto sidewalls of a feature. Methods are suitable for deposition into V-shaped features.

Method for preventing line bending during metal fill process

A showerhead includes a plurality of plenums and a plurality of through holes positioned in the plurality of plenums. The plenums are stacked in a sequential order in an axial direction perpendicular to a semiconductor substrate. The plenums extend radially fully across the semiconductor substrate. The plenums are disjoint from each other and are configured to respectively supply a first metal precursor, a second metal precursor, and a reactant via the respective plenums without intermixing the first metal precursor, the second metal precursor, and the reactant in the plenums. The through holes of the respective plenums are arranged in a radial direction, which is perpendicular to the axial direction, in the same sequential order as the sequential order of the plenums. The through holes of the plenums open along a flat surface at a bottom of the showerhead. The flat surface extends radially fully across the bottom of the showerhead.

Systems and methods for homogenous intermixing of precursors in alloy atomic layer deposition

Provided herein are methods of depositing tungsten (W) films without depositing a nucleation layer. In certain embodiments, the methods involve depositing a conformal reducing agent layer of boron (B) and/or silicon (Si) on a substrate. The substrate generally includes a feature to be filled with tungsten with the reducing agent layer conformal to the topography of the substrate including the feature. The reducing agent layer is then exposed to a fluorine-containing tungsten precursor, which is reduced by the reducing agent layer to form a layer of elemental tungsten. The conformal reducing agent layer is converted to a conformal tungsten layer.

Nucleation-free tungsten deposition

Various showerheads and methods are provided. A showerhead may include a faceplate partially defined by a front surface and a back surface, a back plate having a gas inlet, a first conical frustum surface, and a second conical frustum surface, a plenum volume fluidically connected to the gas inlet and at least partially defined by the gas inlet, the back surface of the faceplate, the first conical frustum surface, and the second conical frustum surface, and a baffle plate positioned within the plenum volume, and having a plurality of baffle plate through-holes extending through the baffle plate. The second conical frustum surface may be positioned radially outwards from the first conical frustum surface with respect to a center axis of the showerhead, and the second conical frustum surface may be positioned along the center axis farther from the gas inlet than the first conical frustum surface.

Metal deposition

Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. The methods involve forming bulk conductive films on thin low resistivity transition metal layers that have large grain size. The bulk conductive films follow the grains of the low resistivity transition metal films, resulting in large grain size. Also provided are devices including template layers and bulk films.

Deposition of tungsten on molybdenum templates

Molybdenum deposition

Described herein are methods of filling features with tungsten, and related systems and apparatus, involving inhibition of tungsten nucleation. In some embodiments, the methods involve selective inhibition along a feature profile. Methods of selectively inhibiting tungsten nucleation can include exposing the feature to a direct or remote plasma. Pre-inhibition and post-inhibition treatments are used to modulate the inhibition effect, facilitating feature fill using inhibition across a wide process window. The methods described herein can be used to fill vertical features, such as in tungsten vias, and horizontal features, such as vertical NAND (VNAND) wordlines. The methods may be used for both conformal fill and bottom-up/inside-out fill. Examples of applications include logic and memory contact fill, DRAM buried wordline fill, vertically integrated memory gate and wordline fill, and 3-D integration using through-silicon vias.

Feature fill with nucleation inhibition

Methods, systems, and computer programs are presented for determining the recipe for manufacturing a semiconductor with the use of machine learning (ML) to accelerate the definition of recipes. One general aspect includes a method that includes an operation for performing experiments for processing a component, each experiment controlled by a recipe, from a set of recipes, that identifies parameters for manufacturing equipment. The method further includes an operation for performing virtual simulations for processing the component, each simulation controlled by one recipe from the set of recipes. An ML model is obtained by training an ML algorithm using experiment results and virtual results from the virtual simulations. The method further includes operations for receiving specifications for a desired processing of the component, and creating, by the ML model, a new recipe for processing the component based on the specifications.

Determination of recipes for manufacturing semiconductor devices

A method includes arranging a substrate in a processing chamber, and exposing the substrate to a gas mixture including a first metal precursor gas and a second metal precursor gas to deposit a first metal precursor and a second metal precursor onto the substrate at the same time. The method further includes purging the processing chamber, supplying a reactant common to both the first metal precursor and the second metal precursor to form a layer of an alloy on the substrate, and purging the processing chamber.

Disclosed are methods of depositing a transition metal such as tungsten on a semiconductor substrate. The method includes providing a gas mixture of diborane with a balance of hydrogen, where the hydrogen serves to stabilize the diborane in the gas mixture. The method further includes delivering the gas mixture to the semiconductor substrate to form a boron layer, where the boron layer serves as a reducing agent layer to convert a metal-containing precursor to metal, such as a tungsten-containing precursor to tungsten. In some implementations, the semiconductor substrate includes a vertical structure, such as a three-dimensional vertical NAND structure, with horizontal features or wordlines having openings in sidewalls of the vertical structure, where the boron layer may be conformally deposited in the horizontal features of the vertical structure.

Metal fill process for three-dimensional vertical NAND wordline

Defects on a substrate comprising electronic components can be classified with a computational defect analysis system that may be implemented in multiple stages. For example, a first stage classification engine may process metrology data to produce an initial classification of defects. A second stage classification engine may use the initial classification, along with manufacturing information and/or prior defect knowledge to output probabilities that the defects are caused by one or more potential sources.

Defect classification and source analysis for semiconductor equipment

Described herein are methods of filling features with tungsten and related systems and apparatus. The methods include inside-out fill techniques as well as conformal deposition in features. Inside-out fill techniques can include selective deposition on etched tungsten layers in features. Conformal and non-conformal etch techniques can be used according to various implementations. The methods described herein can be used to fill vertical features, such as in tungsten vias, and horizontal features, such as vertical NAND (VNAND) word lines. Examples of applications include logic and memory contact fill, DRAM buried word line fill, vertically integrated memory gate/word line fill, and 3-D integration with through-silicon vias (TSVs).

Tungsten feature fill

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Cupertino, CA, United States of America

Michal Danek