Instytut Wysokich Cisnien Polskiej Akademii Nauk

Centrum Badan Wysokocisnieniowych Polskiej Akademii Nauk

Michal Bockowski

Tadeusz Suski

Sylwester Porowski

Izabella Grzegory

Piotr Perlin

Michal Leszczynski

Robert Czernecki

Robert Kucharski

Miroslaw Wroblewski

Stanislaw Krukowski

Marcin Sarzynski

Boleslaw Lucznik

Karolina Grabianska

Katarzyna Holc

The present invention relates to a method for reducing lateral growth as well as growth of the bottom surface of crystals in a crystal growing process, wherein before the crystal seed undergoes a growing process the method includes a step of wrapping the crystal seed with metal foil so that all the side surfaces as well as the bottom surface of the crystal seed are surrounded by the foil.

Method for reducing lateral growth of GaN crystals in an ammonothermal crystal growing process

The method of fabrication of highly resistive GaN bulk crystals by crystallization from the solution of atomic nitrogen in the molten mixture of metals, containing gallium in the concentration not lower than 90 at. % and the Periodic Table group II metals: calcium, beryllium or in the concentration of 0.01-10 at. %, at the temperature 1300-1700&deg; C., under the nitrogen pressure 0.5-2.0 GPa and in the presence of temperature gradient characterized by the temperature gradient not higher than 10&deg; C./cm.

Method of fabrication of highly resistive GaN bulk crystals

Growing community of inventors

Warsaw, Poland

Michal Bockowski