Infineon Technologies Ag

Michaela Braun

Albert Birner

Helmut Brech

Matthias Zigldrum

Jan Ropohl

Christian Eckl

Markus Menath

In an embodiment, a semiconductor device includes a semiconductor substrate having a front surface, a LDMOS transistor in the front surface, and a metallization structure arranged on the front surface. The metallization structure includes at least one cavity arranged in at least one dielectric layer. Related methods of manufacture are also described.

Method of manufacturing a semiconductor device including an LDMOS transistor

In one embodiment, a wafer includes a number of die areas each including a semiconductor device and dedicated to become a separate die. The die areas are disposed on a first face of the wafer and wherein adjacent die areas are distanced from one another. A first trench and a second trench are formed on the first face between adjacent die areas. The first trench and the second trench are spaced apart from one another by a ridge. A third trench is disposed above the ridge on a second face of the wafer.

Method for use in manufacturing a semiconductor device die

In an embodiment, a semiconductor device includes a semiconductor substrate having a bulk resistivity &#x3c1;&#x2265;100 Ohm.cm, a front surface and a rear surface. An LDMOS transistor is arranged in the semiconductor substrate. A RESURF structure including a doped buried layer is arranged in the semiconductor substrate. The LDMOS transistor includes a body contact region doped with a first conductivity type, and a source region disposed in the body contact region and doped with a second conductivity type opposite the first conductivity type. The source region includes a first well and a second well of the same second conductivity type. The first well is more highly doped than the second well. The first well extends from inside the body contact region to outside of a lateral extent of the body contact region in a direction towards a source side of a gate of the LDMOS transistor.

Semiconductor device including an LDMOS transistor and a resurf structure

In an embodiment, a method includes forming a first opening in a front surface of a semiconductor substrate including a LDMOS transistor structure, and covering the first opening with a first layer to form an enclosed cavity defined by material of the semiconductor substrate and the first layer. The material of the first layer lines sidewalls of the enclosed cavity.

LDMOS transistor structure and method of manufacture

In an embodiment, a semiconductor device includes a semiconductor substrate having a front surface, a LDMOS transistor in the front surface, and a metallization structure arranged on the front surface. The metallization structure includes at least one cavity arranged in at least one dielectric layer.

Semiconductor device including a LDMOS transistor and method

In an embodiment, a high frequency amplifying circuit includes a semiconductor device. The semiconductor device includes a semiconductor substrate having a bulk resistivity &#x3c1;&#x2265;100 Ohm&#xb7;cm, a front surface and a rear surface, an LDMOS (Lateral Diffused Metal Oxide Semiconductor) transistor in the semiconductor substrate, and a RESURF structure comprising a doped buried layer arranged in the semiconductor substrate, spaced at a distance from the front surface and the rear surface, and coupled with at least one of a channel region and a body contact region of the LDMOS transistor.

Semiconductor device including an LDMOS transistor and a RESURF structure

In an embodiment, a semiconductor device includes a semiconductor substrate including a front surface, an LDMOS transistor structure in the front surface, a conductive interconnection structure arranged on the front surface, and at least one cavity arranged in the front surface.

Semiconductor device including a LDMOS transistor, monolithic microwave integrated circuit and method

In an embodiment, a semiconductor device includes a semiconductor substrate having a bulk resistivity &#x3c1;&#x2265;100 Ohm.cm, a front surface and a rear surface, at least one LDMOS transistor in the semiconductor substrate, and a RESURF structure. The RESURF structure includes a doped buried layer arranged in the semiconductor substrate, spaced at a distance from the front surface and the rear surface, and coupled with at least one of a channel region and a body contact region of the LDMOS transistor.

Growing community of inventors

Wuppertal, Germany

Michaela Braun