Advanced Micro Devices Corporation

Ati Technologies Ulc

Globalfoundries Inc.

Advanced Micro Device, Inc.

Michael Zhouying Su

Bryan Black

Gamal Refai-Ahmed

Lei Fu

Joe Siegel

Frank G Kuechenmeister

Seth Prejean

Michael S Alfano

Jaime Bravo

Neil McLellan

Joseph R Siegel

Julius Din

Zhen Zhang

Jun Zhai

Roden R Topacio

Vassilios Papageorgiou

Anwar Kashem

Maxat Touzelbaev

Yizhang Yang

Dales Morrison Kent

Edward S Alcid

Ranjit Gannamani

Michael Bienek

Thomas Schulze

Kevin W Lim

Amado Ramirez

Ronnie Brandon

Frank Kuechenmeister

A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.

Semiconductor chip with redundant thru-silicon-vias

A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.

Various interposers and method of manufacturing related thereto are disclosed. In one aspect, a method of manufacturing is provided that includes coupling an identification structure to an interposer. The identification structure is operable to provide identification information about the interposer. The identification structure is programmable to create or alter the identification information.

Interposer with identification system

Various interposers and methods of manufacturing related thereto are disclosed. In one aspect, an apparatus is provided that includes an interposer that has a first side and a second side opposite the first side. The first side has a first reticle field and a second reticle field larger than the first reticle field. Plural conductor pads are positioned on the first side in the first reticle field. Plural dummy conductor pads are positioned on the first side in the second reticle field and outside the first reticle field.

Interposer with beyond reticle field conductor pads

Various semiconductor workpieces with selective backside metallizations and methods of making the same are disclosed. In one aspect, a method of manufacturing is provided that includes providing a semiconductor workpiece that has multiple dies. A backside metallization is fabricated on a first die of the dies but not on a second die of the dies.

Semiconductor workpiece with selective backside metallization

A method of manufacturing is provided that includes applying a thermal interface tape to a side of a semiconductor wafer that includes at least one semiconductor chip. The thermal interface material tape is positioned on the at least one semiconductor chip. The at least one semiconductor chip is singulated from the semiconductor wafer with at least a portion of the thermal interface tape still attached to the semiconductor chip.

Semiconductor chip with thermal interface tape

A method of assembling a semiconductor chip device is provided that includes placing an interposer on a first semiconductor chip. The interposer includes a first surface seated on the first semiconductor chip and a second surface adapted to thermally contact a heat spreader. The second surface includes a first aperture. A second semiconductor chip is placed in the first aperture.

Stacked semiconductor chips with thermal management

A method of manufacturing is provided that includes providing a semiconductor chip with an insulating layer. The insulating layer includes a trench. A second semiconductor chip is stacked on the first semiconductor chip to leave a gap. A polymeric filler is placed in the gap wherein a portion of the polymeric filler is drawn into the trench.

Semiconductor chip device with polymeric filler trench

A method of assembling a semiconductor chip device is provided that includes providing a circuit board including a surface with an aperture. A portion of a first heat spreader is positioned in the aperture. A stack is positioned on the first heat spreader. The stack includes a first semiconductor chip positioned on the first heat spreader and a substrate that has a first side coupled to the first semiconductor chip.

Stacked semiconductor chip device with thermal management circuit board

Various methods and apparatus for establishing thermal pathways for a semiconductor device are disclosed. In one aspect, a method of manufacturing is provided that includes providing a first semiconductor chip that has a substrate and a first active circuitry portion extending a first distance into the substrate. A barrier is formed in the first semiconductor chip that surrounds but is laterally separated from the first active circuitry portion and extends into the substrate a second distance greater than the first distance.

Semiconductor chip device with solder diffusion protection

A device instructs a power supply to provide a current to a power cycling test structure that includes a heat source interconnected with a package, via a first level interconnect mechanism, and a printed circuit board (PCB) interconnected with the package, via a second level interconnect mechanism. The device also monitors thermal feedback associated with the heat source, and monitors, based on the provided current, voltage feedback associated with the power cycling test structure. The device further determines a thermal profile of the power cycling test structure based on the thermal feedback and the voltage feedback.

Power cycling test arrangement

Various semiconductor workpieces and methods of dicing the same are disclosed. In one aspect, a method of manufacturing is provided that includes forming a channel in a metallization structure on a backside of a semiconductor workpiece. The semiconductor workpiece includes a substrate. The channel is in substantial alignment with a dicing street on a front side of the semiconductor chip.

Semiconductor workpiece with backside metallization and methods of dicing the same

A method of manufacturing is provided that includes fabricating a first plurality of electrically functional interconnects on a front side of a first semiconductor chip and fabricating a first plurality of electrically non-functional interconnects on a back side of the first semiconductor chip. Additional chips may be stacked on the first semiconductor chip.

Thermal management of stacked semiconductor chips with electrically non-functional interconnects

A method of manufacturing is provided that includes placing a removable cover on a surface of a substrate. The substrate includes a first semiconductor chip positioned on the surface. The first semiconductor chip includes a first sidewall. The removable cover includes a second sidewall positioned opposite the first sidewall. A first underfill is placed between the first semiconductor chip and the surface wherein the second sidewall provides a barrier to flow of the first underfill. Various apparatus are also disclosed.

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Round Rock, TX, United States of America

Michael Zhouying Su