Nxp B.v.

Michael Zandt

Erwin Hijzen

Radu Surdeanu

Romain Delhougne

Raymond Josephus Hueting

An electronic device (), the electronic device () comprises a substrate (), a first electrode () formed at least partially on the substrate (), a second electrode () formed at least partially on the substrate (), a convertible structure () connected between the first electrode () and the second electrode (), and a spacer element () connected between the first electrode () and the second electrode () and adapted for spacing the convertible structure () with regard to a surface of the substrate ().

Electronic device comprising a convertible structure, and a method of manufacturing an electronic device

There is a method of manufacturing a semiconductor device with a dual gate field effect transistor, the method including a semiconductor body a semiconductor material having a surface with a source region and a drain region of a first conductivity type and with a channel region of a second conductivity type opposite to the first conductivity type between the source region and the drain region and with a first gate region separated from the surface of the semiconductor body by a first gate dielectric above the channel region and with a second gate region situated opposite to the first gate region and formed within a recess in an opposite surface of the semiconductor body so as to be separated from the channel region by a second gate dielectric wherein the recess is formed with a local change of the doping of the channel region and by etching starting from the opposite surface of the semiconductor body.

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Veldhoven, Netherlands

Michael Zandt