Palo Alto Research Center Inc.

Michael Yu Tak Young

Scott Jong Ho Limb

Karl Anthony Littau

David Kirtland Fork

Eugene Michael Chow

Baomin Xu

Peter Johan Nystrom

Robert Anthony Street

William S Wong

Steven A Buhler

Cathie J Burke

Scott Eugene Solberg

Michael C Weisberg

Richard Schmachtenberg, Iii

Sharon S Berger

Beverly Russo

Thomas Long

Timothy Trang

A system and method for in-process yield evaluation and correction in an array type of device are provided. The system and method include measuring electrical resistance between individual GATE lines, DATA lines, a DATA bus I/O pad, and a GATE bus I/O pad; and analyzing the measured electrical resistance to identify at least one of the following: GATE line open defects, GATE line bridge defects, DATA line open defects, DATA line bridge defects, and interlayer shunt defects.

Method of in-process intralayer yield detection, interlayer shunt detection and correction

The presently described embodiments are directed to a calibration method and system for thin film thermistors that are locally heated with integrated thin film heaters. Initially, print head temperature is either measured or referenced. Then, transient thermistor resistances are measured and used to determine the thermistor resistance at a higher temperature. Notably, this calibration method is advantageously implemented as a step of an existing process without having to expose the print heads to operating temperatures. In some implementations of the presently described embodiments, trimming of the thermistors may be required once calibrated.

Method and apparatus for calibrating a thermistor

Disclosed is a MEMS device which comprises at least one shape memory material such as a shape memory alloy (SMA) layer and at least one stressed material layer. Examples of such MEMS devices include an actuator, a micropump, a microvalve, or a non-destructive fuse-type connection probe. The device exhibits a variety of improved properties, for example, large deformation ability and high energy density. Also provided is a method of easily fabricating the MEMS device in the form of a cantilever-type or diaphragm-type structure.

Methods for manufacturing stressed material and shape memory material MEMS devices

A liquid drop ejector comprising a jet stack, thin film or thick film heaters formed on the surface of the jet stack, and at least one thin film or thick film temperature sensor operative to provide feedback temperature control for the thin film or thick film heater elements is provided. In one form, the liquid drop ejector also has the thin film or thick film heater elements grouped in segments that are operative to be individually controlled. In addition, in another form, the signal lines provided to the liquid drop ejector are patterned to allow for more uniform resistance over the span of the liquid drop ejector.

Thin film and thick film heater and control architecture for a liquid drop ejector

Stressed material and shape memory material MEMS devices and methods for manufacturing

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Cupertino, CA, United States of America

Michael Yu Tak Young