Mattson Technology, Inc

Beijing E-town Semiconductor Technology, Co., Ltd

Applied Materials, Inc.

Pacesetter, Inc.

Amazon Technologies, Inc.

Palantir Technologies Inc.

Other

St Jude Medical, Atrial Fibrillation Division, Inc

A9.com, Inc.

Pacestter, Inc.

Beijing E-town Semiconductor Co, , Ltd.

Michael Xiaoxuan Yang

Hua Chung

Ming Xi

Wenbo Hou

Stuart Rosenberg

Kyungmoo Ryu

Xinliang Lu

Allen J Keel

Rolf Bremensdorfer

Kjell Noren

Sheldon Williams

Steve Koh

Kevin L Morgan

Shawming Ma

Qi Zhang

Hongbin Fang

Avgerinos V Gelatos

Ken Kaung Lai

Joseph Cibere

Dmitry Lubomirsky

Yougandh Chitre

John R Helland

Jeong Soo Byun

Chun Yan

Sean M Seutter

Henry Ho

Haichun Yang

Dieter Hezler

Gene A Bornzin

Mei Yin Chang

Ryan Justin Snodgrass

Eric Falkenberg

Jack Grossman

Yu Wen Chang

Nicholas J Maniscalco

Anh Ngoc Nguyen

Lawrence Manning

Carl Freeland

Nicolay Kovarsky

John Chakerian

Euljoon Park

Karl Anthony Littau

Ashok K Sinha

Alfred W Mak

Arulkumar P Shanmugasundram

Hyungsuk Alexander Yoon

Steven Roger Conger

Allen L D'Ambra

Moris Kori

Siqing Lu

Amit Khandelwal

Frederick C Wu

Srinivas Gandikota

Ling Chen

Saurav Paul

Hong Cao

Kedar Ravindra Belhe

Hooman Hafezi

Christophe Marcadal

Chen-An Chen

Anzhong Chang

Xiaoping Guo

Thomas Powell

Myles Scolnick

Steven Aihua Chen

Kjell Norén

Erich Lawrence Ringewald

Ryan Rowe

Yeuk-Fai Edwin Mok

Jim Inoue

Xiaoyi Min

Jeffrey C Hudgens

Yezdi N Dordi

Tetsuya Ishikawa

Alexander N Lerner

Harald Herchen

Todd J Egan

Vincent W Ku

Timothy Weidman

Fusen E Chen

Zhi-Wen Sun

Girish Anant Dixit

Saravjeet Singh

Farhad K Moghadam

Son Truong Nguyen

Chien-Teh Kao

Mark William Kroll

Damon Keith Cox

Xiaoxiong Yuan

Gongda Yao

Chou Thao

Vincent E Burkhart

Kapila P Wijekoon

Andre Frederico Cavalheiro Menck

Lily L Pang

Riki Chou Thao

Paul F Smith

Greg Kampa

James Edward Winchester

Yifei Huang

A processing apparatus for a thermal treatment of a workpiece is presented. The processing apparatus includes a processing chamber, a workpiece support disposed within the processing chamber, a gas delivery system, and radiative heat sources for heating the workpiece. The gas delivery system includes a gas showerhead assembly that is transparent to electromagnetic radiation emitted from the one or more radiative heat sources. The gas showerhead assembly includes one or more gas diffusion mechanisms to distribute gas within the enclosure.

Workpiece processing apparatus with gas showerhead assembly

Systems and methods for thermal processing of a workpiece at low temperatures are disclosed. In one example implementation, a thermal processing apparatus includes a processing chamber having a workpiece support. The workpiece support can be configured to support a workpiece. The apparatus can include one or more heat sources configured to emit electromagnetic radiation in a first wavelength range to heat the workpiece to a processing temperature. The processing temperature can be in the range of about 50° C. to 150° C. The apparatus can include one or more sensors configured to obtain a measurement of electromagnetic radiation in a second wavelength range when the workpiece is at the processing temperature. The second wavelength range can be different from the first wavelength range.

Systems and methods for thermal processing and temperature measurement of a workpiece at low temperatures

A thermal processing system for performing thermal processing can include a workpiece support plate configured to support a workpiece and heat source(s) configured to heat the workpiece. The thermal processing system can include window(s) having transparent region(s) that are transparent to electromagnetic radiation within a measurement wavelength range and opaque region(s) that are opaque to electromagnetic radiation within a portion of the measurement wavelength range. A temperature measurement system can include a plurality of infrared emitters configured to emit infrared radiation and a plurality of infrared sensors configured to measure infrared radiation within the measurement wavelength range where the transparent region(s) are at least partially within a field of view the infrared sensors. A controller can be configured to perform operations including obtaining transmittance and reflectance measurements associated with the workpiece and determining, based on the measurements, a temperature of the workpiece less than about 600° C.

Transmission-based temperature measurement of a workpiece in a thermal processing system

An apparatus for combining plasma processing and thermal processing of a workpiece is presented. The apparatus includes a processing chamber, a plasma chamber separated from the processing chamber disposed on a first side of the processing chamber, and a plasma source configured to generate a plasma in the plasma chamber. A quartz workpiece support is disposed within the processing chamber, the workpiece support configured to support a workpiece. One or more radiative heat sources configured to heat the workpiece are disposed on a second and opposite side of the first side of the processing chamber. A dielectric window is disposed between the workpiece support and the one or more heat sources. In addition, the apparatus includes a temperature measurement system configured to obtain a temperature measurement indicative of a temperature of the workpiece.

Workpiece processing apparatus with thermal processing systems

A control system operable to train a control tuner to generate temperature setpoint tracking improvements for a thermal processing system is provided. In one example implementation, temperature setpoint tracking improvements are achieved by generating system controller parameter adjustments based on a difference between a simulated workpiece temperature estimate and an actual workpiece temperature estimate. For example, a system model can generate a simulated workpiece temperature estimate simulating an actual workpiece temperature estimate, and based on the difference between the simulated and actual workpiece temperature estimates, generate clone controller parameter adjustments. The clone controller parameter adjustments can be used to generate system controller parameter adjustments, which can improve temperature setpoint tracking for the thermal processing system.

Control system for adaptive control of a thermal processing system

Apparatus, systems, and methods for processing workpieces are provided. An arc lamp can include a tube. The arc lamp can include one or more inlets configured to receive water to be circulated through the arc lamp during operation as a water wall, the water wall configured to cool the arc lamp. The arc lamp can include a plurality of electrodes configured to generate a plasma in a forming gas introduced into the arc lamp via the one or more inlets. The forming gas can be or can include a mixture of a hydrogen gas and an inert gas, the hydrogen gas in the mixture having a concentration less than 4% by volume. The hydrogen gas can be introduced into the arc lamp prior to generating the plasma. The arc lamp may be used for processing workpieces.

Arc lamp with forming gas for thermal processing systems

Support plates for localized heating in thermal processing systems to uniformly heat workpieces are provided. In one example implementation, localized heating is achieved by modifying a heat transmittance of a support plate such that one or more portions of the support plate proximate the areas that cause cold spots transmit more heat than the rest of the support plate. For example, the one or more portions (e.g., areas proximate to one or more support pins) of the support plate have a higher heat transmittance (e.g., a higher optical transmission) than the rest of the support plate. In another example implementation, localized heating is achieved by heating a workpiece via a coherent light source through a transmissive support structure (e.g., one or more support pins, or a ring support) in addition to heating the workpiece globally by light from heat sources.

Support plate for localized heating in thermal processing systems

Apparatus, systems, and methods for processing workpieces are provided. In one example implementation, a hydrogen gas mixed with an inert gas can be reacted with an oxygen gas to oxidize a workpiece at atmospheric pressure. A chemical reaction of a hydrogen gas with an oxygen gas facilitated by a hot workpiece surface can positively affect an oxidation process. A reaction speed of the chemical reaction can be slowed down by mixing the hydrogen gas with an inert gas. Such mixture can effectively reduce a partial pressure of the hydrogen gas. As such, the oxidation process can be carried out at atmospheric pressure, thereby, in an atmospheric thermal processing chamber.

Apparatus for hydrogen assisted atmospheric radical oxidation

A processing system for processing a plurality of workpieces includes a transfer chamber in process flow communication with a first processing chamber and a second processing chamber, the transfer chamber having a first straight side, wherein the first process chamber includes at least one first processing station, and wherein the first processing chamber is disposed along the first straight side, wherein the second process chamber includes at least two second processing stations, wherein the second processing chamber is disposed along the first straight side, and wherein the second process chamber disposed in linear arrangement with the first process chamber along the first straight side, and wherein the transfer chamber includes at least one workpiece handling robot configured to transfer at least one workpiece to the at least one first processing station and the at least two second processing stations.

Systems and methods for workpiece processing

Workpiece processing apparatus with plasma and thermal processing systems

Apparatus, systems, and methods for processing workpieces are provided. In one example, the system includes a processing chamber. The system includes a workpiece support configured to support a workpiece within the processing chamber. The system includes a heat source configured to emit light toward the workpiece. The system includes a shutter disposed between the workpiece and the heat source. The shutter includes an electrochromic material configurable in a translucent state and an opaque state. When the electrochromic material is configured in the opaque state, the shutter reduces transmission of the light through the shutter, and when the electrochromic material is configured in the translucent state, the light at least partially passes through the shutter. The system includes a controller configured to control the shutter to reduce transmission of light through the shutter during a thermal treatment process.

Thermal processing system with transmission switch plate

Systems and methods for thermal treatment of a workpiece are provided. In one example, a method for conducting a treatment process on a workpiece, such as a thermal treatment process, an annealing treatment process, an oxidizing treatment process, or a reducing treatment process in a processing apparatus is provided. The processing apparatus includes a plasma chamber and a processing chamber. The plasma chamber and the processing chamber are separated by a plurality of separation grids or grid plates. The separation grids or grid plates operable to filter ions generated in the plasma chamber. The processing chamber has a workpiece support operable to support a workpiece.

Methods for the treatment of workpieces

Systems and methods for etching titanium containing layers on a workpiece are provided. In one example, a method includes placing the workpiece on a workpiece support in a processing chamber. The workpiece includes a first layer and a second layer. The first layer is a titanium containing layer. The method includes admitting a process gas into the processing chamber. The process gas includes an ozone gas and a fluorine containing gas. The method includes exposing the first layer and the second layer on the workpiece to the process gas to at least partially etch the first layer at a greater etch rate relative to the second layer.

Selective etch process using hydrofluoric acid and ozone gases

A method for processing a workpiece is provided. The method can include placing a workpiece on a susceptor disposed within a processing chamber. The method can include performing a multi-cycle thermal treatment process on the workpiece in the processing chamber. The multi-cycle thermal treatment process can include at least two thermal cycles. Each thermal cycle of the at least two thermal cycles can include performing a first treatment on the workpiece at a first temperature; heating a device side surface of the workpiece to a second temperature in less than one second; performing a second treatment on the workpiece at approximately the second temperature; and cooling the workpiece subsequent to performing the second treatment.

Method for processing a workpiece using a multi-cycle thermal treatment process

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Palo Alto, CA, United States of America

Michael Xiaoxuan Yang