National Technology & Engineering Solutions of Sandia, LLC

The University of Texas System

The Ohio State University

Michael Wood

Darwin K Serkland

Alejandro J Grine

Jon Ihlefeld

Salvatore Campione

Ting S Luk

Gordon Arthur Keeler

Gregory M Peake

Kent M Geib

Joshua Shank

Alexander Ruyack

Bryan James Kaehr

Ronald M Reano

Andrew E Hollowell

Ryan Patton

Sam Palermo

Isak C Reines

A photonics transceiver is described herein, wherein the photonics transceiver exhibits improved areal bandwidth density and improved energy per bit consumption relative to conventional photonics transceivers. The photonics transceiver achieves an areal bandwidth density of at least 5 Tbps/mmwith an energy consumption of less than 500 fJ/bit (sum of energy consumed for both a transmitted bit and a received bit). The photonics transceiver is a multi-chip module, where chips in the multi-chip module are tightly integrated with one another. The multi-chip module includes light source, photodetector, photonics, and control/logic chips. The photonics chip includes transparent conducting oxide integrated optical modulators and multiplexers and demultiplexers based on MEMS-tunable optical ring resonators.

Multi-chip photonics transceiver

A microelectromechanical systems (MEMS)-tunable optical ring resonator is described herein. The ring resonator includes a resonator ring and a tuner ring, along with one or more springs. The springs may be internal or external, i.e., either within or outside the areal footprint of the resonator ring and the tuner ring. The one or more springs are configured to displace the tuner ring from the resonator ring by a desired gap based upon a desired resonant wavelength of the resonator ring. Tuning is implemented by applying a voltage to the ring resonator, with motion of the tuner ring causing a corresponding change in the effective index of the resonator ring. As the ring resonator is essentially a capacitive device, it draws very little power once tuning is achieved.

MEMS-tunable optical ring resonator

An electroabsorption modulator that operates based on electroabsorption of a surface plasmon polariton mode is improved by various structural changes and/or selection of different materials. For example, at least a portion of the waveguide may be made to be conductive, e.g., by doping. Also, layers that make up the modulator structure may be placed along sides of waveguides in addition to or instead of simply on the top thereof. High permittivity gate dielectric materials may be employed. Also, materials other than ITO may be employed as a transparent conductor. Such an improved plasmonic electroabsorption modulator can be fabricated using standard semiconductor processing techniques and may be integrated with standard photonic integrated circuits, including silicon photonics and compound semiconductor-based platforms. Advantageously, high-speed, low-voltage operation over a wide spectrum of wavelengths may be achieved.

Electroabsorption optical modulator

A method of optical modulation in a non-resonant epsilon-near-zero (EMZ) plasmonic electro-optical modulator is provided. An optical carrier is injected into a waveguide optically coupled to a layer of transparent conductive material having an epsilon-near-zero (ENZ) wavelength. The transparent conductive material layer constitutes a portion of a capacitive structure that includes a gate dielectric layer. A time-varying bias voltage applied across the gate dielectric layer shifts the ENZ wavelength toward the carrier wavelength, and thereby impresses a phase modulation pattern on the carrier wave.

Methods of epsilon-near-zero optical modulation

A coupled-cavity vertical-cavity surface-emitting laser (VCSEL) is disclosed. The coupled-cavity VCSEL includes a passive cavity and an additional distributed Bragg Reflector (DBR) not found in conventional VCSELs, all in a monolithic device. By including these two elements, the photon lifetime may be increased by a factor of approximately ten, leading to a reduction in the laser linewidth by a factor of approximately 100 compared to conventional VCSELs. The two additional elements also serve to ensure single-mode operation of the coupled-cavity VCSEL.

Narrow-linewidth single-mode vertical-cavity surface-emitting laser

An apparatus and a method for detecting rotation based on the Sagnac effect is disclosed. Input light having sufficient power is injected into a circulating optical resonator to thereby excite an optomechanical oscillation of the resonator at an instantaneous mechanical angular frequency. Rotation of the circulating optical resonator causes a change in a frequency of the optomechanical oscillation of the resonator, which in turn causes the instantaneous mechanical angular frequency to change. The optomechanical oscillation produces modulation sidebands in the resonating optical field at the instantaneous mechanical angular frequency and harmonics thereof, which are demodulated from the optical frequency by detection in a photodetector. Differences in the instantaneous mechanical angular frequency induced by rotation are detected by processing the photodetector output signal.

Optomechanical gyroscope utilizing the Sagnac effect

Amorphous silicon devices, systems, and related methods are described herein. An example method for fabricating a thin film with light-emitting or light-detecting capability can include depositing a thin film of amorphous silicon on a wafer such that crystalline defects are distributed throughout the thin film. Additionally, an example photonic device can include a p-doped region and an n-doped region formed on a wafer, and a resonator structure formed on the wafer. The resonator structure can be formed from amorphous silicon and can be arranged between the p-doped and n-doped regions to form a PIN junction. Optionally, the photonic device can be incorporated into a monolithic integrated optical system.

Growing community of inventors

Albuquerque, NM, United States of America

Michael Wood