Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Opto Semiconductor Gmbh

Osram Gmbh

Michael Wittmann

Peter Brick

Stefan Groetsch

Andreas Dobner

Sebastian Wittmann

Uli Hiller

Thomas Schwarz

Matthias Goldbach

Ludwig Hofbauer

Markus Heinrich Klein

David Racz

Rainer Huber

Michael Brandl

Andreas Waldschik

Matthias Bruckschloegl

Stefan Grötsch

Martin Brandl

Andreas Löffler

Stefan Gruber

Simon Schwalenberg

Adam Bauer

Wolfgang Mönch

Dominik Schulten

Matthias Kiessling

Hubert Halbritter

Ion Stoll

Tobias Gebuhr

Luca Haiberger

Johann Ramchen

Markus Wicke

Ulrich Frei

Sven Weber-Rabsilber

Markus Schneider

Andreas Barth

Armin Wetterer

Stephan Pawlik

Hanna Schulz

An optoelectronic device comprises a layer stack, which includes a carrier layer, a cover layer, and a first layer. The first layer is in particular an intermediate layer, arranged between the cover layer and the carrier layer. At least one electronic or optoelectronic element, in particular an optoelectronic light source, is arranged on the first layer and at least one layer of the layer stack and preferably all layers of the layer stack are at least partially transparent. The layer stack comprises at least one layer which comprises particles with a high thermal conductivity and/or at least one thermally conductive layer which is arranged between two adjacent layers of the layer stack.

Optoelectronic device

An optoelectronic apparatus comprises a transparent first cover, at least two carriers mounted on the first cover, wherein a plurality of optoelectronic elements configured to emit light are attached to each of the at least two carriers, and a second cover mounted on the at least two carriers, wherein the second cover has at least partially a lower optical transmittance than the first cover and/or the at least two carriers.

Apparatus comprising a carrier with optoelectronic elements and method for manufacturing the apparatus

An optoelectronic device, in particular an at least semi-transparent pane for example for a vehicle, comprises: a cover layer, a carrier layer, an intermediate layer between the cover layer and the carrier layer, wherein at least one and preferably a plurality of optoelectronic light sources, in particular μLEDS, is arranged on at least one surface of the intermediate layer and/or is at least partially embedded in the intermediate layer, wherein the intermediate layer is adapted such that light emitted by the optoelectronic light sources at least partially spreads in and along the intermediate layer and exits the intermediate layer within and/or at a pre-set distance to the respective optoelectronic light source in a direction through the cover layer and/or through the carrier layer.

An optoelectronic device, in particular a display device, comprises: at least one optoelectronic light source, an at least partially transparent front layer, an at least partially transparent support layer, wherein the light source is arranged between the front layer and the support layer, wherein a front side of the light source faces the front layer and a rear side of the light source faces the support layer, and wherein a limiting device is provided in a circumferential direction around the light source, wherein the limiting device limits a spatial region, in which the light source emits light such that total internal reflection of the emitted light, in particular at an interface between the front layer and the outside, is avoided or at least reduced.

An optoelectronic device comprises a plurality of optoelectronic light sources being arranged on a first layer, in particular an intermediate layer being arranged between a cover layer and a carrier layer. The first layer comprises or consists of an at least partially transparent material and each optoelectronic light source of the plurality of optoelectronic light sources comprises an individual light converter for converting light emitted by the associated light source into converted light. The light converter of each optoelectronic light source is arranged on the first layer and/or the associated optoelectronic light source.

A semiconductor component and an illumination device is disclosed. In an embodiment the semiconductor component includes a semiconductor chip configured to generate a primary radiation having a first peak wavelength and a radiation conversion element arranged on the semiconductor chip. The radiation conversion element includes a quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength and a substrate that is transmissive to the primary radiation.

Semiconductor component and illumination device

An optoelectronic component may include an optoelectronic semiconductor chip having an upper side and a lower side. An emitting region may be formed on the upper side. The emitting region may be configured to emit electromagnetic radiation. A subsurface, forming the emitting region, of the upper side may be smaller than a total surface of the upper side. A collimating optical element may be arranged over the emitting region.

Optoelectronic component

An optoelectronic component has at least one lead frame section, wherein an optoelectronic element is arranged on the lead frame section, a mold material is applied at least on a first face of the lead frame section and adhesively connected to the lead frame section by the first face, the lead frame section consists of a predetermined material, a part of the first face of the lead frame section is provided with a coating, a region of the first face is free of the coating, and the mold material connects to the material of the lead frame section in the free region.

Optoelectronic component with a lead frame section

A radiation emitting device is disclosed. In an embodiment a radiation emitting device includes a pixelated optoelectronic semiconductor chip configured to emit a first radiation having a first peak wavelength, a conversion element or color control medium configured to convert at least a portion of the first radiation into a second radiation having a second peak wavelength and a color control element including a semiconductor diode configured to absorb a portion of the first and/or second radiation, wherein devise is configured to emit radiation of a first color temperature composed mainly of the first and second radiations when a reverse voltage is applied to the semiconductor diode and to emit radiation of a second color temperature composed mainly of the first and second radiations and a third radiation with a third peak wavelength generated by the absorbed first and/or second radiation in the semiconductor diode when a forward voltage is applied to the semiconductor diode.

Radiation emitting device

An optoelectronic lighting device includes a black housing including a cavity, wherein the cavity includes a base, a semiconductor component is arranged on the base of the cavity with an underside of a main body facing the base, and the cavity is filled with a reflective material from the base up to a predetermined height, which is smaller than a height of a top side of the main body relative to the base of the cavity such that electromagnetic radiation emerging from the main body through side faces may be reflected by the reflective material back in the direction of the side faces to couple reflected electromagnetic radiation into the main body such that at least part of the electromagnetic radiation coupled in may emerge again from the main body through the top side of the main body.

Optoelectronic lighting device

A radiation-emitting semiconductor device includes a housing body having a chip mounting area, a chip connection region, a radiation-emitting semiconductor chip, and a light-absorbing material, wherein the radiation-emitting semiconductor chip is fixed to the chip connection region, the chip connection region is covered with the light-absorbing material at selected locations at which the chip connection region is not covered by the radiation-emitting semiconductor chip, the radiation-emitting semiconductor chip is free of the light-absorbing material in selected locations, the housing body has a cavity in which the at least one radiation-emitting semiconductor chip is arranged, the chip mounting area is a surface of the housing body which abuts the cavity, and the chip mounting area is free of the light-absorbing material in selected locations remote from the chip connection region.

Radiation-emitting semiconductor device

An optoelectronic component includes a first lead frame section and a second lead frame section spaced apart from one another, and having an optoelectronic semiconductor chip arranged on the first lead frame section and the second lead frame section, wherein the first lead frame section and the second lead frame section respectively have an upper side, a lower side and a first side flank extending between the upper side and the lower side, a first lateral solder contact surface of the optoelectronic component is formed on the first side flank of the first lead frame section, and the first lateral solder contact surface is formed by a recess arranged on the first side flank of the first lead frame section and extends from the upper side to the lower side of the first lead frame section.

Optoelectronic component and method of producing an optoelectronic component

A method of producing an optoelectronic component includes providing a lead frame having an upper side including a contact region and a chip reception region raised relative to the contact region; arranging an electrically conductive element on the contact region; embedding the lead frame in a molded body, wherein the contact region is covered by the molded body, and the chip reception region and the electrically conductive element remain accessible on an upper side of the molded body; arranging an optoelectronic semiconductor chip on the chip reception region; and connecting the optoelectronic semiconductor chip and the electrically conductive element by a bonding wire.

Method of producing an optoelectronic component and optoelectronic component

An optoelectronic semiconductor component includes a first functional region having an active zone provided for generating radiation or for receiving radiation, and a second functional region, which is suitable for contributing to the driving of the first functional region. The first functional region and the second functional region are integrated on the same carrier substrate.

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Alteglofsheim, Germany

Michael Wittmann