Fibics Incorporated

Chipworks Inc.

Dcg Systems Gmbh

Techinsights Inc.

Other

Fei Comapny

Carl Zeiss Microscopy Gmbh

Michael William Phaneuf

Ken Guillaume Lagarec

Alexander Krechmer

Alexander Sorkin

Julia Elvidge

Andrew John Murray

David F Skoll

Terry Ludlow

Pierrette M Breton

Dick James

Ray Haythornthwaite

Chris Pawlowicz

Pierrette Breton

Dirk Preikszas

Christopher Pawlowicz

J David Casey, Jr

Kathryn Noll

Richard F Shuman

Jian Li

Bryan Socransky

Michael Anthony Anderson

Louise Weaver

The invention relates to a particle beam device () for imaging, analyzing and/or processing an object (). The particle beam device () comprises a first particle beam generator () for generating a first particle beam, wherein the first particle beam generator () has a first generator beam axis (), wherein an optical axis (OA) of the particle beam device () and the first generator beam axis () are identical; a second particle beam generator () for generating a second particle beam, wherein the second particle beam generator () has a second generator beam axis (), wherein the optical axis (OA) and the second generator beam axis () are arranged at an angle being different from 0° and 180°; a deflection unit () for deflecting the second particle beam from the second generator beam axis () to the optical axis (OA) and along the optical axis (OA), wherein the deflection unit () has a first opening () and a second opening () being different from the first opening (), wherein the optical axis (OA) runs through the first opening (), wherein the second generator beam axis () runs through the second opening (); an objective lens () for focusing the first particle beam or the second particle beam onto the object (), wherein the optical axis (OA) runs through the objective lens (); and at least one detector () for detecting interaction particles and/or interaction radiation.

Particle beam device having a deflection unit

Linear fiducials with known angles relative to each other are formed such that their structures appear in a cross-sectional face of the sample as a distinct structure. Therefore, when imaging the cross-section face during the cross-sectioning operation, the distance between the identified structures allows unique identification of the position of the cross-section plane along the Z axis. Then a direct measurement of the actual position of each slice can be calculated, allowing for dynamic repositioning to account for drift in the plane of the sample and also dynamic adjustment of the forward advancement rate of the FIB to account for variations in the sample, microscope, microscope environment, etc. that contributes to drift. An additional result of this approach is the ability to dynamically calculate the actual thickness of each acquired slice as it is acquired.

Fiducial guided cross-sectioning and lamella preparation with tomographic data collection

A method for attaching a prepared sample to a carrier in a focused ion beam chamber. The method includes reducing a temperature within the chamber to substantially below room temperature followed by moving the prepared sample adjacent to a substrate carrier surface. The temperature can be lowered sufficiently to establish a cryogenic condition in the chamber. Attachment of the prepared sample to the substrate carrier is done by controlling the focused ion beam to raster a target area of the surface in the absence of a gas deposition precursor, to sputter material onto the base of the sample and the substrate carrier surface, thereby binding the prepared sample to the substrate carrier.

Method for cross-section sample preparation

Linear fiducials including notches or chevrons with known angles relative to each other are formed such that each branch of a chevron appears in a cross-sectional face of the sample as a distinct structure. Therefore, when imaging the cross-section face during the cross-sectioning operation, the distance between the identified structures allows unique identification of the position of the cross-section plane along the Z axis. Then a direct measurement of the actual position of each slice can be calculated, allowing for dynamic repositioning to account for drift in the plane of the sample and also dynamic adjustment of the forward advancement rate of the FIB to account for variations in the sample, microscope, microscope environment, etc. that contributes to drift. An additional result of this approach is the ability to dynamically calculate the actual thickness of each acquired slice as it is acquired.Linear fiducials including notches or chevrons with known angles relative to each other are formed such that each branch of a chevron appears in a cross-sectional face of the sample as a distinct structure. Therefore, when imaging the cross-section face during the cross-sectioning operation, the distance between the identified structures allows unique identification of the position of the cross-section plane along the Z axis. Then a direct measurement of the actual position of each slice can be calculated, allowing for dynamic repositioning to account for drift in the plane of the sample and also dynamic adjustment of the forward advancement rate of the FIB to account for variations in the sample, microscope, microscope environment, etc. that contributes to drift. An additional result of this approach is the ability to dynamically calculate the actual thickness of each acquired slice as it is acquired.

Method and system for cross-sectioning a sample with a preset thickness or to a target site

A method to compensate for drift while controlling a charged particle beam (CPB) system having at least one charged particle beam controllable in position. Sources of drift include mechanical variations in the stage supporting the sample, beam deflection shifts, and environmental impacts, such as temperature. The method includes positioning a sample supported by a stage in the CPB system, monitoring a reference fiducial on a surface of the sample from a start time to an end time, determining a drift compensation to compensate for a drift that causes an unintended change in the position of a first charged particle beam relative to the sample by a known amount over a period of time based on a change in the position of the reference fiducial between the start time and the end time, and adjusting positions of the first charged particle beam by applying the determined drift compensation during an operation of the CPB system.

Microscopy imaging method for 3D tomography with predictive drift tracking for multiple charged particle beams

A carrier grid with integrated gas delivery system for use in a charged particle beam system (CPB). The carrier grid has a body with an internal reservoir for storing a gas. A post extends from the body with an end for supporting a sample to be operated upon, and an outlet tip extends from the end of the post. A channel extends from the reservoir, through the post and ends in the outlet tip, where the outlet tip seals the stored gas in the body. Cutting the outlet tip near its base, with a focused ion beam (FIB) by example, will open the channel to the CPB chamber, allowing the prestored gas within the reservoir to escape. A FIB or electron beam directed at the junction of the sample positioned near the post will cause deposition and subsequent attachment of the sample to the post in presence of the gas.

Linear fiducials including notches or chevrons with known angles relative to each other are formed such that each branch of a chevron appears in a cross-sectional face of the sample as a distinct structure. Therefore, when imaging the cross-section face during the cross-sectioning operation, the distance between the identified structures allows unique identification of the position of the cross-section plane along the Z axis. Then a direct measurement of the actual position of each slice can be calculated, allowing for dynamic repositioning to account for drift in the plane of the sample and also dynamic adjustment of the forward advancement rate of the FIB to account for variations in the sample, microscope, microscope environment, etc. that contributes to drift. An additional result of this approach is the ability to dynamically calculate the actual thickness of each acquired slice as it is acquired.

Method and system for iteratively cross-sectioning a sample to correlatively targeted sites

A novel method for cross-section sample preparation has a sample oriented normal to an SEM/GFIS or other imaging column via a stage, and is operated upon by an FIB to form the cross-section pre-lamella within the sample, followed by an approximate 90&#xb0; rotation with no tilt of the stage for cut out by the FIB. Asymmetric trenches are milled to have a three-dimensional depth profile to ensure that the FIB has clear line of sight to a face of the resulting pre-lamella when the sample has been rotated. The three-dimensional depth profile further minimizes overall milling time required for the preparation of the pre-lamella.

Notches or chevrons with known angles relative to each other are formed on a surface of the sample, where each branch of a chevron appears in a cross-sectional face of the sample as a distinct structure. Therefore, when imaging the cross-section face during the cross-sectioning operation, the distance between the identified structures allows unique identification of the position of the cross-section plane along the Z axis. Then a direct measurement of the actual position of each slice can be calculated, allowing for dynamic repositioning to account for drift in the plane of the sample and also dynamic adjustment of the forward advancement rate of the FIB to account for variations in the sample, microscope, microscope environment, etc. that contributes to drift. An additional result of this approach is the ability to dynamically calculate the actual thickness of each acquired slice as it is acquired.

Microscopy imaging method and system

Methods and systems for tracing circuitry on integrated circuits using focused ion beam based imaging techniques. A first component or node on an integrated circuit is coupled to a second component or node on the same integrated circuit. After an external bias is applied to the first component or node, a focused ion beam is applied to the integrated circuit and an image is taken using an electron detector. The features or components on the integrated circuit which are coupled to the second component or node will show up in high contrast on the resulting image. The method may also involve applying a bias to a node or component and then using focused ion beam imaging techniques (through an electron detector) to arrive at an image of the integrated circuit. Components coupled to the node will appear in high contrast in the resulting image.

Circuit tracing using a focused ion beam

Generally, the present disclosure provides a method and system for improving imaging efficiency for CPB systems while maintaining or improving imaging accuracy over prior CPB systems. A large field of view image of a sample is acquired at a low resolution and thus, at high speed. The low resolution level is selected to be sufficient for an operator to visually identify structures or areas of interest on the low resolution image. The operator can select one or more small areas of arbitrary shape and size on the low resolution image, referred to as an exact region of interest (XROI). The outline of the XROI is mapped to an x-y coordinate system of the image, and the CPB system is then controlled to acquire a high resolution image of only the XROI identified on the low resolution image. For 3D imaging, once the XROI is identified, each section of the sample can be iteratively imaged in the previously described manner, with the operator having the option to redefine the XROI later.

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Ottawa, Canada

Michael William Phaneuf