Advanced Technology Materials, Inc.

Other

Michael W Russell

Peter C Van Buskirk

Steven M Bilodeau

Daniel J Vestyck

Thomas H Baum

Stephen T Johnston

Jeffrey F Roeder

Jonathan Wolk

George E Emond

Scott Robert Summerfelt

Theodore Sidney Moise

A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 &#x3bc;m. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 10to about 10&#x3bc;m. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material

A method of preventing oxygen deficiency in a ferroelectric or high &#x3b5; film material having a top electrode layer deposited thereon. Process conditions are employed that either enable the top electrode layer to be formed without oxygen abstraction from the ferroelectric or high &#x3b5; film material in the vicinity and at the top surface thereof, or else provide the ferroelectric or high &#x3b5; film material in the vicinity and at the top surface thereof with a surplus of oxygen. In the latter case, the deposition formation of the top electrode layer on the ferroelectric or high &#x3b5; film material depletes the over-stoichiometric excess of the oxygen in the film material, to yield a device structure including an electrode on a film material having a proper stoichiometry, e.g., of PbZrTiO.

Oxidative top electrode deposition process, and microelectronic device structure

A chemical mechanical polishing (CMP) slurry composition for removing noble metal material from a substrate having the noble metal material deposited thereon, for example, a semiconductor device structure including thereon a layer of the noble metal material, e.g., iridium, patterned for use as an electrode. Such polishing slurry composition contains abrasive polishing particles, a bromide compound, a bromate compound for providing free bromine as an oxidizing agent in the composition, and an organic acid for mediating decomposition of the bromate compound in the composition. The CMP slurry composition of the invention is particularly effective for planarization and/or removal of noble metal(s) from the substrate, in applications such as the fabrication of ferroelectric or high permittivity capacitor devices.

Chemical mechanical polishing compositions for CMP removal of iridium thin films

A method of removing noble metal material from a substrate having the noble metal material deposited thereon, such as a semiconductor device structure including thereon a layer of the noble metal material, e.g., iridium, patterned for use as an electrode. The substrate is subjected to chemical mechanical polishing with a chemical mechanical polishing composition containing abrasive polishing particles and a halide-based oxidizing agent. The CMP composition and method of the invention provide efficient planarization and noble metal material removal from the substrate, in applications such as the fabrication of ferroelectric or high permittivity capacitor devices.

Chemical mechanical polishing compositions, and process for the CMP removal of iridium thin using same

An integrated circuit structures formed by chemical mechanical polishing (CMP) process, which comprises a conductive pathway recessed in a dielectric substrate, wherein the conductive pathway comprises conductive transmission lines encapsulated in a transmission-enhancement material, and wherein the conductive pathway is filled sequentially by a first layer of the transmission-enhancement material followed by the conductive transmission line; a second layer of transmission-enhancement material encapsulating the conductive transmission line and contacting the first layer of the transmission-enhancement material, wherein the transmission-enhancement material is selected from the group consisting of high magnetic permeability material and high permittivity material. Such integrated circuit structure may comprise a device structure selected from the group consisting of capacitors, inductors, and resistors. Preferably, the transmission-enhancement material comprises MgMn ferrites, MgMnAl ferrites, barium strontium titanate, lead zirconium titanate, titanium oxide, tantalum oxide, etc.

Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same

A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 &mgr;m. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 10,to about 10,&mgr;m,. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

Scalable lead zirconium titanate(PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material

A microelectronic structure including adjacent material layers susceptible of adverse interaction in contact with one another, and a barrier layer interposed between said adjacent material layers, wherein said barrier layer comprises a binary, ternary or higher order metal nitride-carbide material, whose metal constituents are different from one another and include at least one metal selected from the group consisting of transition metals Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W, Sc and Y, and optionally further including Al and/or Si. The barrier layer is stoichiometrically constituted to be amorphous or nanocrystalline in character, and may be readily formed by techniques such as chemical vapor deposition, sputtering, and plasma-assisted deposition, to provide a diffusional barrier of appropriate resistivity character for structures such as DRAMs or non-volatile ferroelectric memory cells.

Ternary nitride-carbide barrier layers

The present invention is a method related to the deposition of a metallization layer in a trench in a semiconductor substrate. The focus of the invention is to sequentially perform heated deposition and etch unit processes to provide a good conformal film of metal on the inner surfaces of a via or trench. The deposition and etch steps can also be performed simultaneously.

Sputtering process for the conformal deposition of a metallization or

A nail is held within a cylindrical nail chamber by a magnetized cylindrical driver rod. A driver sleeve is concentric with the nail chamber, and attached to the rearward end of the driver rod. As the driver sleeve is moved toward a surface, the driver rod drives the nail into the surface. A coil spring, attached between a chamber guide nut on the driver sleeve and the nail chamber, biases the nail driver in the extended position. A reinforcement cap between the driver rod and the driver sleeve is adjustable to adjust the distance that the nail is driven into the surface.

Growing community of inventors

New Milford, CT, United States of America

Michael W Russell