3m Innovative Properties Company

Michael W Bench

Grace L Ho

Michael Albert Haase

Richard M Flynn

Zai-Ming Qiu

Donald J McClure

Steven D Theiss

Erik D Olson

Xiaoguang Sun

Guoping Mao

Jeffrey H Tokie

Kevin Jon Bechtold

Robert J Schubert

Donald J Mcclure

Fluorinated coatings having a lubricious additive, articles with the fluorinated coatings, and methods of making articles with the fluorinated coatings are provided. More specifically, the fluorinated coatings are prepared from a curable coating composition that includes both a fluorinated silane and a fluorinated polyether oil. The curable coating composition is typically applied adjacent to a siliceous substrate and then cured. The resulting cured articles can have an outer surface that has a good tactile response, that is abrasion resistant, that is easy to clean, or a combination thereof.

Fluorinated coatings with lubricious additive

A novel etching agent for etching II-VI semiconductors is provided. The etching agent includes an aqueous solution of potassium permanganate and phosphoric acid. This etching solution can etch II-VI semiconductors at a rapid rate but tend to be much less reactive with III-V semiconductors. The provided agent can be used in a method for etching II-VI semiconductors.

Wet etching agent for II-VI semiconductors and method

A process for forming gate structures is described. A web comprises a substrate, a plurality of conductive elements disposed on the substrate, and a conductive anodization bus. The web is moved through an anodization station to form a plurality of gate structures comprising a plurality of gate dielectrics adjacent to a plurality of gate electrodes. A process for forming electronic devices further providing a semiconductor, a source electrode, and a drain electrode is described.

Method for forming gate structures

Method of fabricating electronic devices is disclosed. The method includes the steps of forming an anodized layer that has a thickness greater than a desired thickness, and forming an electrically conductive layer on the anodized layer. The method further includes the steps of removing the conductive layer in a selected area to expose the anodized layer, and removing the exposed anodized layer until the anodized layer in the exposed area has the desired thickness.

Method of fabricating thin film transistor

Growing community of inventors

Eagan, MN, United States of America

Michael W Bench