International Business Machines Corporation

Infineon Technologies Ag

Qimonda Ag

Michael Vieth

Rainer Leuschner

Wolfgang Raberg

Ulrich Karl Klostermann

Stephen L Brown

Manfred Ruehrig

Frank Findeis

Sivanandha K Kanakasabapathy

An integrated circuit includes a plurality of magnetic tunneling junction stacks, each magnetic tunneling junction stack including a reference layer, a barrier layer and a free layer, wherein the plurality of magnetic tunneling junction stacks share a continuous common reference layer.

Integrated circuit, memory module, and method of manufacturing an integrated circuit

Methods of forming ferromagnetic liners on the top surface and sidewalls of conductive lines of magnetic memory devices. The ferromagnetic liners increase the flux concentration of current run through the conductive lines, reducing the amount of write current needed to switch magnetic memory cells. In one embodiment, an in-bound pole is formed at the bottom edge of conductive lines, further concentrating the flux.

Ferromagnetic liner for conductive lines of magnetic memory cells and methods of manufacturing thereof

Growing community of inventors

Moehrendorf, Germany

Michael Vieth