E/g Electro-graph, Inc.

Advanced Technology Materials, Inc.

University of California

Michael Vella

In systems where insulating deposits form during normal operation, electrodes are configured with a preformed dielectric thereon, wherein the preformed dielectric is formed with a geometric feature that preforms a triple junction. These triple junctions enhance low level discharge activity to facilitate localized breakdown of the deposits and maintain electrode conductivity.

Device having preformed triple junctions to maintain electrode conductivity and a method for making and using the device

In systems where insulating deposits form during normal operation, electrodes are configured so the deposits have the effect of creating in-situ triple junctions. These triple junctions enhance low level discharge activity to facilitate localized breakdown of the deposits and maintain electrode conductivity.

In-situ triple junction formation to maintain electrode conductivity

An ion beam processing system includes a plasma generator with a magnetic flood system. Magnets are provided for reducing the transverse magnetic field in the ion beam transport region of the plasma flood device so as to control charging damage or to neutralize beam space charge in ion beam processing and semiconductor ion implantation. The system is especially adapted for beam lines with ribbon beams.

Magnetic field reduction apparatus and magnetic plasma flood system for ion beam processing

A thermoregulation system for an ion implantation system to reduce the temperature in the ion implanter and components therein, or attached thereto, to a temperature at which an ion source material, used in the ion implanter, has a vapor pressure that yields a reduced concentration of vapors. Such arrangement markedly reduces the risk of exposure to harmful vapors from the ion source material.

Thermal regulation of an ion implantation system

Ions, particularly molecular ions with multiple dopant nucleons per ion, are produced by charge exchange. An ion source contains a minimum of two regions separated by a physical barrier and utilizes charge exchange to enhance production of a desired ion species. The essential elements are a plasma chamber for production of ions of a first species, a physical separator, and a charge transfer chamber where ions of the first species from the plasma chamber undergo charge exchange or transfer with the reactant atom or molecules to produce ions of a second species. Molecular ions may be produced which are useful for ion implantation.

Charge exchange molecular ion source

An improved double chamber ion source comprising a plasma generating chamber, a charge exchange chamber and a divider structure therebetween. The charge exchange chamber includes magnetic shielding material to reduce exposure of interior components to magnetic field lines externally generated. The double compartment ion source further comprises inclusion of a heat shield and/or a cooling system to overcome deleterious effects caused by increased temperature in the plasma generating chamber. The divider structure has a plurality of apertures having a configuration to reduce surface area on the divider structure in the charge exchange chamber.

Growing community of inventors

San Leandro, CA, United States of America

Michael Vella