Western Digital Technologies, Inc.

Everspin Technologies, Inc.

Michael Tran

Neil Smith

Michael Grobis

Renu Whig

Goran Mihajlovic

Sumio Ikegawa

Ganesh Kolliyil Rajan

Jacob Wang Chenchen

A magnetoresistive device includes a magnetically fixed region and a magnetically free region positioned on opposite sides of a tunnel barrier region. One or more transition regions, including at least a first transition region and second transition region, is positioned between the magnetically fixed region and the tunnel barrier region. The first transition region includes a non-ferromagnetic transition metal and the second transition region includes an alloy including iron and boron.

Magnetoresistive stack and methods therefor

A magnetoresistive random access memory (MRAM) memory cell comprises a pinned layer having fixed direction of magnetization that is perpendicular to a plane of the pinned layer, a first free layer having a direction of magnetization that can be switched and is perpendicular to a plane of the first free layer, a tunnel barrier positioned between the pinned layer and the first free layer, a second free layer having a direction of magnetization that can be switched, and a spacer layer positioned between the first free layer and the second free layer. Temperature dependence of coercivity of the second free layer is greater than temperature dependence of coercivity of the first free layer.

Heat assisted perpendicular spin transfer torque MRAM memory cell

Growing community of inventors

San Jose, CA, United States of America

Michael Tran