Semiconductor Components Industries, LLC

Michael Thomason

Mohammed Tanvir Quddus

Mihir Mudholkar

Gordon M Grivna

James P Morgan

Scott M Donaldson

Mingjiao Liu

Stevan Gaurdello Hunter

A method of forming a semiconductor device includes providing a region of semiconductor material comprising a major surface. A termination trench is provided extending from a first portion of the major surface into the region of semiconductor material to a first depth and has a first width. A first active trench is provided extending from a second portion of the major surface into the region of semiconductor material to a second depth and has a second width less than the first width. A second active trench is provided extending from a third portion of the major surface into the region of semiconductor material to a third depth and has a third width less than the first width. A first conductive material is provided adjoining a fourth portion of the major surface, which is configured as a Schottky barrier. The selected trench depth difference alone or in combination with other features provides a semiconductor device having improved performance characteristics.

Trench semiconductor device having multiple active trench depths and method

A method for forming a semiconductor device includes providing a region of semiconductor material. The method includes providing a trench structure having a trench extending into the region of semiconductor material from a first major surface, and a conductive material disposed within the trench and separated from the region of semiconductor material by a dielectric region. The method includes providing a Schottky contact region disposed adjacent to the first major surface and adjacent to the trench structure. In one example, providing the Schottky contact region comprises forming a first layer of material consisting essentially of titanium and having a first thickness; forming a second layer of material disposed adjacent to the first layer of material consisting essentially of nickel-platinum and having a second thickness; annealing the first layer of material and the second layer of material; and after the step of annealing, removing any unreacted portions of the first layer of material and the second layer of material. In another example, providing the Schottky contact region comprises providing a layer of material consisting essentially of nickel-chrome.

Method for forming trench semiconductor device having Schottky barrier structure

In one embodiment, a trench Schottky rectifier includes a termination trench and active trenches provided in a semiconductor layer. A first active trench is configured to be at a shallower depth than the termination trench to provide a trench depth difference. A second active trench is configured to be at a depth similar to the termination trench. The selected trench depth difference in combination with one or more of the other second active trench depth, the dopant concentration of the semiconductor layer, the thickness of the semiconductor layer, first active trench width to termination trench width, and/or dopant profile of the semiconductor layer provide a semiconductor device having improved performance characteristics.

A number of variations may include a method that may include depositing a first layer on a first semiconductor layer in an overlying position with respect to at least one trench structure formed in the first semiconductor epi layer. The first layer may include a first metal and a second metal. A second layer may comprise a material constructed and arranged to scavenge semiconductor material migrating from the first semiconductor layer during annealing may be deposited over the first layer. The first semiconductor layer may be subjected to at least a first annealing act to provide a first structure. At least a portion of the first structure may be stripped to remove any of the first layer not reacted with the semiconductor material to form a Schottky barrier structure during the first annealing act.

Semiconductor device and manufacturing method thereof

A Schottky device includes a plurality of mesa structures where one or more of the mesa structures includes a doped region having a multi-concentration dopant profile. In accordance with an embodiment, the Schottky device is formed from a semiconductor material of a first conductivity type. Trenches having sidewalls and floors are formed in the semiconductor material to form a plurality of mesa structures. A doped region having a multi-concentration impurity profile is formed between two trenches, where the impurity materials of the doped region having the multi-concentration impurity profile are of a second conductivity type. A Schottky contact is formed to at least one of the mesa structures having the doped region with the multi-concentration impurity profile.

Methods for manufacturing a Schottky device with mesa regions in-between conductive trenches and having multi-concentration doping profiles

A method of forming a semiconductor includes a providing a termination trench and an active trench within a semiconductor layer. The active trench is configured to be at a shallower depth than the termination trench to provide a trench depth difference. The selected trench depth difference in combination with one or more of the dopant concentration of the semiconductor layer, the thickness of the semiconductor layer, active trench width to termination trench width, and/or dopant profile of the semiconductor layer provide a semiconductor device having improved performance characteristics.

Method of forming trench semiconductor device having multiple trench depths

An electronic device can include one or more trenches that include a material that defines one or more voids. In an embodiment, the substrate defines a first trench having a first portion and a second portion laterally adjacent to the first portion, wherein the first portion has with a first width, the second portion has a second width, and the first width is wider than the second width. The material defines a first void at a predetermined location within the first portion of the first trench and has a seam within the second portion of the first trench. In another embodiment, the substrate defining a trench, and the material that defines spaced-apart voids at predetermined locations within the trench. A process of forming the electronic device can include patterning a substrate to define a trench, and depositing a material within the trench, wherein the deposited material defines a void.

Process of forming an electronic device including a material defining a void

A Schottky device includes a plurality of mesa structures where one or more of the mesa structures includes a doped region having a multi-concentration dopant profile. In accordance with an embodiment, the Schottky device is formed from a semiconductor material of a first conductivity type. Trenches having sidewalk and floors are formed in the semiconductor material to form a plurality of mesa structures. A doped region having a multi-concentration impurity profile is formed in at least one trench, where the impurity materials of the doped region having the multi-concentration impurity profile are of a second conductivity type. A Schottky contact is formed to at least one of the mesa structures having the dope region with the multi-concentration impurity profile.

Schottky device having conductive trenches and a multi-concentration doping profile therebetween

In one embodiment, a trench Schottky rectifier includes a termination trench and active trenches provided in a semiconductor layer. The active trenches are configured to be at a shallower depth than the termination trench to provide a trench depth difference. The selected trench depth difference in combination with one or more of the dopant concentration of the semiconductor layer, the thickness of the semiconductor layer, active trench width to termination trench width, and/or dopant profile of the semiconductor layer provide a semiconductor device having improved performance characteristics.

Trench semiconductor device having multiple trench depths and method

A number of variations may include a method that may include depositing a first layer on a first semiconductor epi layer (epitaxial layer) in an overlying position with respect to at least one trench structure formed in the first semiconductor epi layer. The first layer may include a first metal and a second metal. A second layer may comprise a material constructed and arranged to scavenge silicon migrating from the first semiconductor epi layer during annealing may be deposited over the first layer. The first semiconductor epi layer may be subjected to at least a first annealing act to provide a first structure. At least a portion of the first structure may be stripped to remove any of the first layer not reacted with silicon to form a silicide during the first annealing act.

A number of variations may include a method that may include depositing a first layer on a first semiconductor epi layer (epitaxial layer) in an overlying position with respect to at least one trench structure formed in the first semiconductor epi layer. The layer may include a first metal and a second metal. The first semiconductor epi layer may be subjected to at least a first annealing act to provide a first structure. At least a portion of the first structure may be stripped to remove any of the first layer not reacted with silicon to form a silicide during the first annealing act. Thereafter, the stripped first structure may be subjected to a second annealing act.

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Blackfoot, ID, United States of America

Michael Thomason