Applied Materials, Inc.

Michael T Wauk

Jonathan Gerald England

Hilton Frank Glavish

Babak Adibi

Peter T Kindersley

John Ruffell

David Richard Burgin

Nicholas J Bright

Robert John Clifford Mitchell

Matthew D Castle

Dennis W Wagner

Ryoji Todaka

Bernard Woods

Jose-Antonio Marin

A beam stop ( ) has a charge collecting member ( ) which extends in the direction of scanning of a scanned beam by less than the total distance scanned, so that variation in the charge signal derived from the collecting member can provide a timing signal for use in monitoring alignment of the scanned beam. In a preferred embodiment, the beam stop plate ( ) has slits ( ) leading to apertures ( ) containing charge collecting rods ( ) located within the thickness of the beam stop plate ( ).

Ion implanter and beam stop therefor

An apparatus and method for implanting a desired chemical species in a semiconductor substrate. The apparatus comprises a target chamber, a holder to hold a substrate in the target chamber for implantation, a pump to pump the target chamber down to a desired pressure, a pressure lock to enable a substrate to be passed into the target chamber for loading on the holder while the target chamber is at sub-atmospheric pressure, an ion beam generator for generating and directing a beam of ions containing said desired species at a surface of a substrate on said holder, and a reactive gas supply to feed a reactive gas into the target chamber while the chamber is maintained by the pump at the desired pressure, to provide a desired partial pressure of the reactive gas in the target chamber to reactive with and volatilise unwanted contaminants on surfaces in the target chamber.

Apparatus for and methods of implanting desired chemical species in

Beam stop apparatus for an ion implanter

Method and apparatus for the control of the rate of emission of electrons added to an ion implantation beam to neutralize charging effects on semiconductor wafers being processed. A net charging current, or equivalent voltage, is sensed continuously, but is sampled only when a selected wafer, or multiple selected wafers, are positioned to receive the entire cross section of the ion beam. The sampled charging current is used to control the addition of charge-neutralizing electrons to the ion beam, thereby eliminating problems that ensue from the use of an averaged charging current that is sensed without regard to the relative beam position or the number of wafers being processed.

Method and apparatus for controlling the rate of emission of electrons

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West Sussex, United Kingdom

Michael T Wauk