Hoechst Celanese Corporation

Dupont Electronic Polymers LP

Chem First Electronic Materials L.p.

E.i. Dupont De Nemours and Company

Triquest LP

Michael T Sheehan

James R Sounik

William W Wilkison, Iii

Bret F Hann

Edward G Zey

Mohammad Aslam

Kenneth G Davenport

George Kvakovszky

James H Rea

Brad L Smith

Mark Elliot Wagman

Apurba Bhattacharya

Debasish Kuila

William Brown Farnham

Keith Joseph Kunitsky

Hoang Vi Tran

Richard Vicari

Olan S Fruchey

Mark A Murphy

Bakulesh N Shah

Keith M Russ

Douglas J Gordon

George W Clark, Iii

Lan Shen

George Kvakoyszky

John R Fritsch

Elmer Rauckman

Daqing Zhang

Hiroshi Okazaki

In a first aspect, a composition of matter includes a substantially symmetrical 3-arm star block copolymer having a central core and diblock copolymer arms having inner blocks and outer blocks. In a second aspect, an article includes a substrate, a block copolymer composition on the substrate, and a neutral layer between the substrate and the block copolymer composition.

Substantially symmetrical 3-arm star block copolymers

This invention relates to the preparation and purification of high-X ('chi') diblock copolymers. Such copolymers contain two segments ('blocks') of polymers with significantly different interaction parameters and can be used in directed self-assembly applications.

Preparation, purification and use of high-X diblock copolymers

A process for preparing proponates which comprises the steps of (i) supplying a solution of methanol containing 4-hydroxyphenylmethylcarbinol, (ii) subjecting said solution to an acid catalyzed displacement reaction for a sufficient period of time and under suitable conditions of temperature and pressure to convert substantially all of said carbinol to 4-hydroxyphenylmethylcarbinol methyl ether in solution, (iii) replacing the methanol in said ether containing solution with a second solvent and (iv) reacting the ether containing ethyl lactate solution with a suitable acid catalyst for a sufficient period of time and under suitable conditions of temperature and pressure to form said propanoates. New compositions of matter which comprise the propanoates, prepared in the above manner, have application in the electronic chemicals market such as in a photoresist composition.

Propanoates and processes for preparing the same

A process for preparing derivatized poly(4-hydroxystryrene) having a novolak type structure which comprises the steps of (i) supplying a solution of methanol containing 4-hydroxyphenylmethylcarbinol, (ii) subjecting said solution to an acid catalyzed displacement reaction for a sufficient period of time and under suitable conditions of temperature and pressure to convert substantially all of said carbinol to 4-hydroxyphenylmethylcarbinol methyl ether in solution, (iii) polymerizing said ether containing solution in the presence of a suitable acid catalyst for a sufficient period of time and under suitable conditions of temperature and pressure to form a novolak type polymer. New compositions of matter which comprise the derivatized poly(4-hydroxystyrene) prepared in the above manner and which have application in the electronic chemicals market such as in a photoresist composition, and in other areas such as in varnishes, printing inks, epoxy resins, copying paper, tackifiers for rubber, crude oil separators, and the like.

Epoxy resin, blocked polyisocyanate or polymers with polyhydroxystyrenes having novolak structure

A process for producing a stable polymer such as poly(hydroxystyrene) which comprises the decarboxylation of a corresponding phenolic in the presence of a non-amine basic catalyst and a polar organic solvent, followed by the polymerization thereof.

Methods for preparing polymers from phenolic materials and compositions relating thereto

A process for preparing derivatized poly(4-hydroxystyrene) having a novolak type structure which comprises the steps of (i) supplying a solution of methanol containing 4-hydroxyphenylmethylcarbinol, (ii) subjecting said solution to an acid catalyzed displacement reaction for a sufficient period of time and under suitable conditions of temperature and pressure to convert substantially all of said carbinol to 4-hydroxyphenylmethylcarbinol methyl ether in solution, (iii) polymerizing said ether containing solution in the presence of a suitable acid catalyst for a sufficient period of time and under suitable conditions of temperature and pressure to form a novolak type polymer. New compositions of matter which comprise the derivatized poly(4-hydroxystyrene) prepared in the above manner and which have application in the electronic chemicals market such as in a photoresist composition, and in other areas such as in varnishes, printing inks, epoxy resins, copying paper, tackifiers for rubber, crude oil separators, and the like.

Derivatized polyhydroxystyrenes with a novolak type structure and processes for preparing the same

A process for preparing a blocked derivatized poly(4-hydroxystryrene)-DPHS having a novolak type structure which comprises the steps of (i) supplying a solution of methanol containing 4-hydroxyphenylmethylcarbinol, (ii) subjecting said solution to an acid catalyzed displacement reaction for a sufficient period of time and under suitable conditions of temperature and pressure to convert substantially all of said carbinol to 4-hydroxyphenylmethylcarbinol methyl ether in solution, (iii) polymerizing said ether containing solution in the presence of a suitable acid catalyst for a sufficient period of time and under suitable conditions of temperature and pressure to form a novolak type polymer; and (iv) reacting said polymer with a vinyl ether, a dialkyl dicarbonate, or a mixture of vinyl ether and a dialkyl dicarbonate to form the blocked DPHS. New compositions of matter which comprise the blocked derivatized poly(4-hydroxystyrene) prepared in the above manner and which have application in the electronic chemicals market such as in a photoresist composition and MEMS, and in other areas such as in varnishes, printing inks, epoxy resins, copying paper, tackifiers for rubber, crude oil separators, toner resins for photocopying, antireflective coatings, and the like.

Derivatized polyhydroxystyrenes (DPHS) with a novolak type structure and blocked DPHS (BDPHS) and processes for preparing the same

Derivatized novolak polyhydroxystyrene

Epoxy resins or polyisocyanates reacted with derivatized novolak polyhydroxystyrene

The invention discloses a composition consisting essentially of an E/X/M random copolymer wherein X is from 0.1 to 20 mol % of the E/X/M copolymer and is a 4-vinylphenyl ester, preferably 4-acetoxystyrene; M is from 0 to 40 mol % of the E/X/M copolymer and is one or more ethylenically unsaturated monomers; and E is ethylene. The invention further encompasses a high pressure radical polymerization process for providing the novel polymers; and a base catalyzed transesterification process for conversion of the E/X/M copolymer to an E/Y/M copolymer wherein Y is derived from 4-hydroxystyrene. Another embodiment of the invention is a composition consisting essentially of an E/Y/M random copolymer wherein Y is greater than 1.0 to about 20 mol % of the E/Y/M copolymer and is 4-hydroxystyrene; M is from 0 to 40 mol % of the E/Y/M copolymer and is one or more ethylenically unsaturated monomers; and E is ethylene.

Random copolymers of ethylene and 4-vinylphenyl esters and method for preparing the same

Derivatized novolak polyhydroxystyrene from hydroxyphenylmethylcarbinol

An anhydrous, liquid phase process for preparing hydroxyl containing polymers of enhanced purity comprising the steps of polymerization, purification, transesterification, purification, catalyst removal, and solvent exchange. The resultant polymer in solution can be used directly, without further processing steps, to prepare a photoresist composition.

Anhydrous, liquid phase process for preparing hydroxyl containing polymers of enhanced purity

Polymers derived from various monomers are purified by fractionalization of the crude polymers in a solvent/non solvent system via reverse precipitation.

Polymer purification

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Corpus Christi, TX, United States of America

Michael T Sheehan