Rf Micro Devices, Inc.

Qorvo Us, Inc.

Michael T Fresina

Brian G Moser

Curtis A Barratt

Dan Carey

Walter Anthony Wohlmuth

Larry W Kapitan

John Cody Bailey

Dain C Miller

Arthur E Geissberger

J Phillip Conlon

Ramond Jeffrey Vass

Naiqian Zhang

Embodiments of semiconductor structure are disclosed along with methods of forming the semiconductor structure. In one embodiment, the semiconductor structure includes a semiconductor substrate, a collector layer formed over the semiconductor substrate, a base layer formed over the semiconductor substrate, and an emitter layer formed over the semiconductor substrate. The semiconductor substrate is formed from Gallium Arsenide (GaAs), while the base layer is formed from a Gallium Indium Nitride Arsenide Antimonide (GaInNAsSb) compound. The base layer formed from the GaInNAsSb compound has a low bandgap, but a lattice that substantially matches a lattice constant of the underlying semiconductor substrate formed from GaAs. In this manner, semiconductor devices with lower base resistances, turn-on voltages, and/or offset voltages can be formed using the semiconductor structure.

Gallium arsenide heterojunction semiconductor structure

The present invention provides a substantially hermetically sealed enclosure about an active device area of a semiconductor substrate. The enclosure is created by forming a guard ring around the active device area on the substrate, and forming a metal panel over and in contact with the guard ring to enclose the active device area. The guard ring is a laminate of metal rings formed from alternating metal filled via rings and metal trace rings. The guard ring is formed on an ohmic contact ring on the surface of the substrate. An annealing process may be used to hermetically seal the guard ring to the ohmic contact ring.

Moisture protection metal enclosure

The present invention relates to a microelectronic device having a bipolar epitaxial structure that provides at least one bipolar transistor element formed over at least one field effect transistor (FET) epitaxial structure that provides at least one FET element. The epitaxial structures are separated with at least one separation layer. Additional embodiments of the present invention may use different epitaxial layers, epitaxial sub-layers, metallization layers, isolation layers, layer materials, doping materials, isolation materials, implant materials, or any combination thereof.

Integrated bipolar transistor and field effect transistor

A voltage variable resistor formed on heterojunction bipolar transistor epitaxial material includes a current channel made on emitter material. Emitter mesas separated by a recess provide the contacts for the voltage variable resistor. Each mesa is topped with emitter metal forming the resistor contacts. The emitter mesas are layered on top of the current channel that is layered atop of a base layer. The voltage variable resistor's control contact is provided by a base contact located on the base layer and separated from the current channel.

Voltage variable resistor from HBT epitaxial layers

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Greensboro, NC, United States of America

Michael T Fresina