Rambus Inc.

Michael T Ching

Steven Cameron Woo

Thomas Vogelsang

Craig M Smith

Michael Guidash

Jay Endsley

James Edward Harris

Jun Y Kim

John W Ladd

Wayne S Richardson

Chad A Bellows

Kurt T Knorpp

Kevin S Donnelly

Bruno Werner Garlepp

Trung Am Diep

Chanh Vi Tran

A sequence of control voltage levels are applied to a control signal line capacitively coupled to a floating diffusion node of a pixel to sequentially adjust a voltage level of the floating diffusion node. A pixel output signal representative of the voltage level of the floating diffusion node is compared with a reference voltage to identify a first control voltage level of the sequence of control voltage levels for which the voltage level of the floating diffusion node exceeds the reference voltage.

Low-noise, high dynamic-range image sensor

Photocharge is integrated within a first plurality of pixels of an integrated-circuit image sensor during a first exposure interval. A read-out signal is output from each pixel of the first plurality of pixels upon conclusion of the first exposure interval, each read-out signal indicating a respective level of photocharge integrated within the corresponding pixel during the first exposure interval. Photocharge is also integrated within a second plurality of pixels during a second exposure interval that transpires concurrently with the first exposure interval and has a duration not more than half the duration of the first exposure interval. A read-out signal is output from each pixel of the second plurality of pixels at least twice with respect to the second exposure interval, with each such read-out signal indicating a respective level of photocharge integrated within the corresponding pixel during at least a portion of the second exposure interval.

Line-interleaved image sensors

An integrated-circuit image sensor generates, as constituent reference voltages of a first voltage ramp, a first sequence of linearly related reference voltages followed by a second sequence of exponentially related reference voltages. The integrated-circuit image sensor compares the constituent reference voltages of the first voltage ramp with a first signal level representative of photocharge integrated within a pixel of the image sensor to identify a first reference voltage of the constituent reference voltages that is exceeded by the first signal level.

The disclosed embodiments relate to a system for processing memory references received from multiple processor cores. During operation, the system monitors the memory references to determine whether memory references from different processor cores are interfering with each other as the memory references are processed by a memory system. If memory references from different processor cores are interfering with each other, the system time-multiplexes the processing of memory references between processor cores, so that a block of consecutive memory references from a given processor core is processed by the memory system before memory references from other processor cores are processed.

Adaptively time-multiplexing memory references from multiple processor cores

Apparatus and methods allocate I/O bandwidth of an electrical component, such as an IC, by configuring an I/O interface into various types of interfaces. In an embodiment of the present invention, an I/O interface is configured into either a bi-directional contact, unidirectional contact (including either a dedicated transmit or dedicated receive contact) or a maintenance contact used in a maintenance or calibration mode of operation. The I/O interface is periodically reconfigured to optimally allocate I/O bandwidth responsive to system parameters, such as changing data workloads in the electronic components. System parameters include, but are not limited to, 1) number of transmit-receive bus turnarounds; 2) number of transmit and/or receive data packets; 3) user selectable setting 4) number of transmit and/or receive commands; 5) direct requests from one or more electronic components; 6) number of queued transactions in one or more electronic components; 7) transmit burst-length setting, 8) duration or cycle count of bus commands, and control strobes such as address/data strobe, write enable, chip select, data valid, data ready; 9) power and/or temperature of one or more electrical components; 10) information from executable instructions, such as a software application or operating system; 11) multiple statistics over respective periods of time to determine if using a different bandwidth allocation would result in better performance. The importance of a system parameter may be weighted over time in an embodiment of the present invention.

Adaptive-allocation of I/O bandwidth using a configurable interconnect topology

Adaptive allocation of I/O bandwidth using a configurable interconnect topology

An integrated circuit memory device has a storage array with an adjustable number of memory banks, a row of sense amplifiers to access storage cells in the storage array; and memory access control circuitry. The memory access control circuitry provides a first number of memory banks and a first page size in the integrated circuit memory device in a first mode of operation, and provides a second number of memory banks and a second page size in the integrated circuit memory device in a second mode of operation. The memory access control circuitry includes logic circuitry to adjust the number of memory banks in the integrated circuit memory device, and to adjust the page size of the integrated circuit memory device.

Integrated circuit memory device having dynamic memory bank count and page size

Apparatus and methods allocate I/O bandwidth of an electrical component, such as an IC, by configuring an I/O interface into various types of interfaces. In an embodiment of the present invention, an I/O interface is configured into either a bidirectional contact, unidirectional contact (including either a dedicated transmit or dedicated receive contact) or a maintenance contact used in a maintenance or calibration mode of operation. The I/O interface is periodically reconfigured to optimally allocate I/O bandwidth responsive to system parameters, such as changing data workloads in the electronic components. System parameters include, but are not limited to, 1) number of transmit-receive bus turnarounds; 2) number of transmit and/or receive data packets; 3) user selectable setting 4) number of transmit and/or receive commands; 5) direct requests from one or more electronic components; 6) number of queued transactions in one or more electronic components; 7) transmit burst-length setting, 8) duration or cycle count of bus commands, and control strobes such as address/data strobe, write enable, chip select, data valid, data ready; 9) power and/or temperature of one or more electrical components; 10) information from executable instructions, such as a software application or operating system; 11) multiple statistics over respective periods of time to determine if using a different bandwidth allocation would result in better performance. The importance of a system parameter may be weighted over time in an embodiment of the present invention.

A memory system includes a master device, such as a graphics controller or processor, and an integrated circuit memory device operable in dynamic memory bank count and page size mode. The integrated circuit memory device includes a first and second row of storage cells coupled to a row of sense amplifiers including a first and second plurality of sense amplifiers. During the first mode of operation, a first plurality of data is transferred from the first plurality of storage cells to the row of sense amplifiers. During the second mode of operation, a second plurality of data is transferred from the first row of storage cells to the first plurality of sense amplifiers and a third plurality of data is transferred from the second row of storage cells to the second plurality of sense amplifiers. The second and third plurality of data is accessible simultaneously from the memory device interface during the second mode of operation. In an embodiment, the second plurality of data is transferred from the first half of the first row and the third plurality of data is transferred from the second half of the second row.

Integrated circuit memory system having dynamic memory bank count and page size

Disclosed herein are circuits in which a plurality of clock signals are generated by corresponding clock generators from one or more common clock references. The clock generators accept control values that specify the phases of the individual clocks. The actual phase of each clock signal potentially varies during operation, and the phases of the various clock signal are generally independent of each other. To detect or measure phase relationships, the disclosed circuits evaluate or compare the control values using arithmetic logic.

Determining phase relationships using digital phase values

A bus driver circuit having slew rate control. According to one embodiment, the bus driver circuit includes the following elements: a first circuit having an input configured to receive a data signal and an output operative to output a drive signal in response to the data signal; a second circuit coupled in parallel with the first circuit and operative to receive a slew rate control signal; and a slew rate indicator circuit coupled to the second circuit. The slew rate indicator circuit determines the state of the slew rate control signal in response to operating conditions that cause variations in the slew rate of the drive signal such that when the slew rate control signal is asserted, the second circuit is enabled to affect the slew rate of the drive signal. For one embodiment, the slew rate indicator includes a pulse generator circuit and a clocked comparator circuit. The pulse generator circuit is operative to receive a clock signal and generate a pulse in response to a first transition of the clock signal. The clocked comparator is coupled to the pulse generator circuit and operative to receive the pulse. The clocked comparator determines the state of the slew rate control signal by sampling for the pulse in response to a second transition of the clock signal.

Growing community of inventors

Los Altos, CA, United States of America

Michael T Ching