Intel Corporation

Other

Michael Stephen Bowen

Sey-Shing Sun

Robert S Chau

Brian S Doyle

Charles C Kuo

Elijah V Karpov

Eric R Dickey

Low voltage embedded memory having conductive oxide and electrode stacks is described. For example, a material layer stack for a memory element includes a first conductive electrode. A conductive oxide layer is disposed on the first conductive electrode. The conductive oxide layer has a plurality of oxygen vacancies therein. A second electrode is disposed on the conductive oxide layer.

Low voltage embedded memory having conductive oxide and electrode stacks

Embodiments include low voltage embedded memory having conductive oxide and electrode stacks. A material layer stack for a memory element includes a first conductive electrode. A conductive oxide layer is disposed on the first conductive electrode. The conductive oxide layer has a plurality of oxygen vacancies therein. A second electrode is disposed on the conductive oxide layer.

An electroluminescent phosphor is sandwiched by a pair of insulating layers which are sandwiched by a pair of electrode layers to provide an AC TFEL device. The phosphor consists of a host material and an activator dopant that is preferably a rare earth. The host material is an alkaline earth sulfide, an alkaline earth selenide or an alkaline earth sulfide selenide that includes a Group 3A metal selected from aluminum, gallium and indium. The phosphor is preferably fabricated by first depositing a layer of the alkaline earth sulfide, alkaline earth selenide or alkaline earth sulfide selenide including the rare earth dopant therein, depositing thereon an overlayer selected from an alkaline earth thiogallate, an alkaline earth thioindate, an alkaline earth thioaluminate, an alkaline earth selenoaluminate, an alkaline earth selenoindate, or an alkaline earth selenogallate. The two layers are annealed at a temperature preferably between 750.degree. and 850.degree. C.

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Milwaukie, OR, United States of America

Michael Stephen Bowen