Infineon Technologies Ag

Infineon Technologies Austria Ag

Other

Qimonda Ag

Michael Stadtmueller

Hans-Joachim Schulze

Wolfgang Lehnert

Moriz Jelinek

Stefan Pompl

Markus Meyer

Johannes Georg Laven

Oliver Blank

Werner Schustereder

Thomas Aichinger

Saurabh Roy

Günter Denifl

Stefan Karner

Gerald Rescher

Germano Galasso

Oliver Haeberlen

Albert Birner

Gerhard Prechtl

Matthias Goldbach

Clemens Ostermaier

Erhard Landgraf

Thomas Hecht

Sven Schmidbauer

Tobias Mono

Guenter Denifl

Matthias Foerster

Jörg Radecker

Moritz Haupt

Henry Bernhardt

Andreas Orth

Wei-Lin Sun

Thomas Seidemann

Maria Reiner

Peter Lagger

Josef Schellander

Kang Nan Khor

Armin Schieber

A semiconductor device is described. The semiconductor device includes: a semiconductor substrate; a trench formed in a first main surface of the semiconductor substrate; a field plate electrode in the trench and reaching a same level as the first main surface of the semiconductor substrate; an insulating material that separates the field plate electrode from the semiconductor substrate; and a material embedded in the field plate electrode. The field plate electrode is made of a different material than the material embedded in the field plate electrode. The trench adjoins a region of the semiconductor substrate through which current flows in a first direction during operation of the semiconductor device. Additional device embodiments and methods of producing the semiconductor device are also described.

Power semiconductor device having an electrode with an embedded material

A method for forming a wide band gap semiconductor device is provided. The method includes forming a gate insulation layer on a wide band gap semiconductor substrate and annealing the gate insulation layer using at least a first reactive gas species and a second reactive gas species, wherein the first reactive gas species differs from the second reactive gas species. The method can include forming a gate electrode on the gate insulation layer after annealing the gate insulation layer.

Method for annealing a gate insulation layer on a wide band gap semiconductor substrate

A semiconductor device is described. The semiconductor device includes: a semiconductor substrate; an electrode structure on or in the semiconductor substrate, the electrode structure including an electrode and an insulating material that separates the electrode from the semiconductor substrate; and a strain-inducing material embedded in the electrode. The electrode structure adjoins a region of the semiconductor substrate through which current flows in a first direction during operation of the semiconductor device. The electrode is under either tensile or compressive stress in the first direction. The strain-inducing material either enhances or at least partly counteracts the stress of the electrode in the first direction. Methods of producing the semiconductor device are also described.

Power semiconductor device having a strain-inducing material embedded in an electrode

Wide band gap semiconductor device and method for forming a wide band gap semiconductor device

A method of manufacturing a trench oxide in a trench for a gate structure in a semiconductor substrate is described. The method includes: generating the trench in the semiconductor substrate; generating an oxide layer over opposing sidewalls of the trench; damaging at least a portion of the oxide layer by ion implantation; coating the oxide layer with an etching mask; generating at least one opening in the etching mask adjacent to one of the opposing sidewalls; and partly removing the oxide layer by etching the oxide layer beneath the etching mask down to an etching depth at the one of the opposing sidewalls by introducing an etching agent into the opening.

Method of manufacturing a trench oxide in a trench for a gate structure in a semiconductor substrate

A method of manufacturing a semiconductor device includes determining information that indicates an extrinsic dopant concentration and an intrinsic oxygen concentration in a semiconductor wafer. On the basis of information about the extrinsic dopant concentration and the intrinsic oxygen concentration as well as information about a generation rate or a dissociation rate of oxygen-related thermal donors in the semiconductor wafer, a process temperature gradient is determined for generating or dissociating oxygen-related thermal donors to compensate for a difference between a target dopant concentration and the extrinsic dopant concentration.

Semiconductor device containing oxygen-related thermal donors

A method for manufacturing a semiconductor device and a semiconductor device are disclosed. The method comprises forming a trench in a substrate, partially filling the trench with a first semiconductive material, forming an interface along a surface of the first semiconductive material, and filling the trench with a second semiconductive material. The semiconductor device includes a first electrode arranged along sidewalls of a trench and a dielectric arranged over the first electrode. The semiconductor device further includes a second electrode at least partially filling the trench, wherein the second electrode comprises an interface within the second electrode.

Capacitor and method of forming a capacitor

Method of manufacturing semiconductor devices and semiconductor device containing oxygen-related thermal donors

A substrate having a buffer layer and a barrier layer is formed. The buffer and barrier layers have different bandgaps such that an electrically conductive channel comprising a two-dimensional charge carrier gas arises at an interface between the buffer and barrier layers due to piezoelectric effects. The substrate is placed in a fluorine containing gas mixture that includes free radical state fluorine particles and is substantially devoid of ionic state fluorine particles. A first lateral surface section of the substrate is exposed to the gas mixture such that the free radical state fluorine particles contact the first lateral surface section without penetrating the substrate. A semiconductor device that incorporates first lateral surface section in the structure of the device is formed in the substrate.

Surface treatment of semiconductor substrate using free radical state fluorine particles

Method of forming a capacitor

The present invention relates to a transistor comprising a gate channel area and a gate stack having mechanical stress arranged on the gate channel area.

Method for manufacturing an integrated circuit including a transistor

The invention provides a method for fabricating a memory cell, a substrate () being provided, a trench-type depression () being etched into the substrate (), a barrier layer () being deposited non-conformally in the trench-type depression (), grain elements () being grown on the inner areas of the trench-type depression (), a dielectric layer () being deposited on the surfaces of the grain elements and the inner areas of the trench-type depression, and a conduction layer being deposited on the dielectric layer, the grain elements () growing selectively on the inner areas () of the trench-type depression () in an electrode region () forming a lower region of the trench-type depression () and an amorphous silicon layer continuing to grow in a collar region () forming an upper region of the trench-type depression ().

Memory cell and method for fabricating it

A heating system, a method for heating a deposition reactor or an oxidation reactor, and a reactor utilizing the heating system are particularly suited for low-pressure chemical vapor deposition or oxidation. A heating system is particularly useful for heating a reactor in which a plurality of wafers is held perpendicularly to the reactant gas flowing direction that is parallel to the longitudinal axis of the reactor, to enable a deposition or oxidation reaction. The heating system is adapted to change the reactor temperature during the process. In addition, a method heats a reactor to enable a reaction. Preferably, each of a plurality of reactor zones, into which the reactor is divided in a direction parallel to the reactant gas flowing direction, is heated at a different temperature profile indicating the temperature of this specific zone versus time. Thereby, the in-plane uniformity of deposited or oxidized layers can be largely improved.

Heating system, method for heating a deposition or oxidation reactor, and reactor including the heating system

Growing community of inventors

Villach, Austria

Michael Stadtmueller