USA as Represented by Secretary of the Navy

Emcore Corporation

Michael Spencer

Alexander I Gurary

Galina Kelner

Ian Ferguson

Kenneth George Irvine

Vladamir A Dmitriev

Apparatus for growing epitaxial layers on wafers by chemical vapor deposition

A silicon carbide semiconductor material; and method of making same, in which a doped film of 3C-silicon carbide is grown heteroepitaxially on a 6H-silicon carbide material. Growth occurs at 1200.degree. C. or less, and produces a heterolayer having a reduced bandgap, and hence reduced contact resistance, but which is fabricatable with the less expensive equipment commonly used to fabricate silicon based semiconductors.

Lower bandgap, lower resistivity, silicon carbide heteroepitaxial

Growing community of inventors

Washington, DC, United States of America

Michael Spencer