Siltronic Ag

Michael Skrobanek

Walter Heuwieser

Karl Mangelberger

Timo Mueller

Gudrun Kissinger

Michael Gehmlich

Timo Müller

A semiconductor single-crystal silicon, is produced from a silicon substrate wafer containing interstitial oxygen in a concentration of more than 5×10AT/cm(new ASTM) by an RTA treatment of the wafer in a first heat treatment at a first temperature in a temperature range of not less than 1200° C. and not more than 1260° C. for a period of not less than 5 s and not more than 30 s, where the front side of the substrate wafer is exposed to an atmosphere containing argon;

Method for producing semiconductor wafers

Single silicon crystals having a resistivity of ≤20 mΩcm are pulled by the Czochralski process from a melt, by a method of pulling a first section of a neck at a first velocity whereby the diameter of a first section of the neck, with respect to the diameter of a seed crystal, tapers at a rate of ≤0.3 mm per mm neck length to a diameter of not more than 5 mm;

Method for pulling a single crystal of silicon in accordance with the Czochralski method

A semiconductor wafer comprising single-crystal silicon has defined concentrations of oxygen, nitrogen and hydrogen; the semiconductor wafer further contains BMD seeds having a density averaged over the radius of not less than 1&#xd7;10cmand not more than 1&#xd7;10cm; surface defects having a density averaged over the radius of not less than 1100 cm; and BMDs, whose density is not lower than a lower limit of 5&#xd7;10/cm. The semiconductor wafers are produced by a process which enables obtention of the required ranges of concentrations of oxygen, nitrogen, hydrogen, BMD seeds, and BMD's.

Semiconductor wafer made of monocrystalline silicon, and method for producing same

The invention relates to a silicon wafer having a radial variation of oxygen concentration of less than 7%, determined over the entire radius of the silicon wafer. The wafers are produced in the Pregion with rotation of crystal and crucible in the same direction, and in the presence of a horizontal magnetic field of defined intensity.

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Freiberg, Germany

Michael Skrobanek