Infineon Technologies Austria Ag

Michael Sieberer

Christoph Sandner

Herwig Wappis

Gerhard Maderbacher

Clemens Roessler

Clemens Rössler

Matthias German Dietl

Lina Purwin

Alexander Zesar

Sebastian Ludwig Habicht

A device for controlling trapped ions includes a substrate. An electrode structure is mounted on the substrate. The electrode structure includes DC electrodes and RF electrodes of an ion trap configured to trap ions in a space above the substrate. A temperature sensor is disposed at the substrate and configured to sense temperatures below 50K.

Device for controlling trapped ions having a temperature sensor

A device for controlling trapped ions includes an ion trap, a plurality of field electrodes configured to control ions in the ion trap, and a controller chip. The controller chip includes at least one delta-sigma digital to analog converter (DS-DAC) module including a DS-DAC circuit configured to receive a digital data stream, convert the digital data stream to analog control voltages, and supply the analog control voltages to the field electrodes.

Device for controlling trapped ions and including a delta/sigma dac module

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Graz, Austria

Michael Sieberer