Sensor Electronic Technology, Inc.

Rensselaer Polytechnic Institute

USA as Represented by Secretary of the Navy

US Government as Represented by the Secretary of the Army

Power Integrations, Inc.

Globalfoundries Inc.

United States of America, as Represented by the Secretary of Agriculture

Seoul Viosys Co., Ltd.

Vilniaus Universitetas;

Michael Shur

Remigijus Gaska

Alexander Dobrinsky

Maxim S Shatalov

Jinwei Yang

Grigory Simin

Rakesh B Jain

Timothy James Bettles

Yuri Bilenko

Saulius Smetona

Wenhong Sun

Mikhail Gaevski

Igor Agafonov

Alexander Lunev

Robert Mark Kennedy

Alexei Koudymov

Yuriy Bilenko

Xuhong Hu

Arthur Peter Barber

Arthur Peter Barber, Iii

Jianping Zhang

Qhalid Fareed

Arturas Zukauskas

Muhammad Asif Khan

Daniel Billingsley

John Suarez

Emmanuel N Lakios

Alexander L Efros

Rimantas Vaicekauskas

Ignas Gaska

Meredith Reed

Henrikas Vaitkevicius

Greg Rupper

Sergey Rudin

Boris N Feigelson

Milan Pophristic

Benjamin L Greenberg

Xiaobin Xin

Feliksas Ivanauskas

Victor Ryzhii

Jianyu Deng

Mukta G Farooq

Hong Shen

Partha S Dutta

David J Meyer

Robert F Karlicek

Brandon A Robinson

Pranciskus Vitta

Carlton Gibson

Anqing Liu

Igor Shturm

Arunas Tuzikas

Remigijua Gaska

Feliksas Ivanaukas

Steven J Britz

Remis Gaska

Tanuj Saxena

Tor Fjeldly

Jinwci Yang

Serguei Lvovich Roumiantsev

Remigilus Gaska

Rajesh N Gupta

Octavio Luis Perez

Arthur Peter Iii Barber

Arthur Peter Barber Iii

Emmanuel Lakios

One embodiment provides a line of sight detector. The line of sight detector includes a first TeraFET (field effect transistor) including a first source, a first drain, a first gate, and a first channel having a first end and a second end. The line of sight detector further includes a first source antenna coupled to the first source; a first drain antenna coupled to the first drain; and a third antenna. Each antenna is configured to receive an incident radiation signal having a frequency in a sub terahertz or a terahertz frequency range. Each antenna is positioned a respective distance from each other antenna. Each distance is less than one wavelength of the incident radiation signal.

Line-of-sight detector and communication system in sub-THz and THz ranges

One embodiment provides a semiconducting device for at least one of detecting, producing or manipulating electromagnetic radiation having a frequency of at least 100 gigahertz (GHz). The semiconducting device includes a heterodimensional plasmonic structure, and an active layer. The heterodimensional plasmonic structure includes at least one nanostructure configured to form a heterodimensional junction with the active layer and having a tunable resonant plasmon frequency.

Terahertz and sub-terahertz devices

A solution for controlling mildew in a cultivated area is described. The solution can include a set of ultraviolet sources that are configured to emit ultraviolet and/or blue-ultraviolet radiation to harm mildew present on a plant or ground surface. A set of sensors can be utilized to acquire plant data for at least one plant surface of a plant, which can be processed to determine a presence of mildew on the at least one plant surface. Additional features can be included to further affect the growth environment for the plant. A feedback process can be implemented to improve one or more aspects of the growth environment.

Radiation-based mildew control

Various embodiments are described that relate to failure determination for an integrated circuit. An integrated circuit can be tested to determine if the integrated circuit is functioning properly. The integrated circuit can be subjected to a specific radiation such that the integrated circuit produces a response. This response can be compared against an expected response to determine if the response matches the expected response. If the response does not match the expected response, then the integrated circuit fails the test. If the response matches the expected response, then the integrated circuit passes the test.

Terahertz plasmonics for testing very large-scale integrated circuits under bias

An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.

Heterostructure including a semiconductor layer with graded composition

A bipolar nanocomposite semiconductor (BNS) material in which electrons and holes are separately transported throughout the BNS volume via an interpenetrating plurality of networks, where some of the networks have one conductivity type and others have the opposite conductivity type. The interpenetrating networks can include one or more multiple nanocrystalline structures, metal and dielectric networks and are intimately connected to enable band-like transport of both electrons and holes throughout the material.

Bipolar nanocomposite semiconductors

One embodiment provides a computing device. The computing device is configured to couple to a display. The computing device includes an ambient detection module configured to detect a characteristic of ambient light relative to at least a portion of a display area of the display. The computing device further includes a displayed image optimization module configured to optimize a feature of at least a portion of a displayed image based, at least in part, on the characteristic of the ambient light.

Smart visual display

Approaches for evaluating fluid based on fluorescent sensing is disclosed. In one approach, a nanoparticle injector is configured to inject nanoparticles into a fluid. A detector is configured to determine a presence of the nanoparticles in the fluid. The detector can include a radiation source configured to irradiate the fluid with a target radiation and a fluorescent meter configured to measure an amount of fluorescence emitted from the fluid irradiated with the radiation. A control unit is configured to determine the a set of attributes corresponding to the fluid as a function of the measured amount of fluorescence.

Fluorescent sensing for evaluating fluid

An optoelectronic device configured for improved light extraction through a region of the device other than the substrate is described. A group III nitride semiconductor layer of a first polarity is located on the substrate and an active region can be located on the group III nitride semiconductor layer. A group III nitride semiconductor layer of a second polarity, different from the first polarity, can located adjacent to the active region. A first contact can directly contact the group III nitride semiconductor layer of the first polarity and a second contact can directly contact the group III nitride semiconductor layer of the second polarity. Each of the first and second contacts can include a plurality of openings extending entirely there through and the first and second contacts can form a photonic crystal structure. Some or all of the group III nitride semiconductor layers can be located in nanostructures.

Light extraction from optoelectronic device

An approach for controlling light exposure of a light sensitive object is described. Aspects of this approach involve using a first set of radiation sources to irradiate the object with visible radiation and infrared radiation. A second set of radiation sources spot irradiate the object in a set of locations with a target ultraviolet radiation having a range of wavelengths. Radiation sensors detect radiation reflected from the object and environment condition sensors detect conditions of the environment in which the object is located during irradiation. A controller controls irradiation of the light sensitive object by the first and second set of radiation sources according to predetermined optimal irradiation settings specified for various environmental conditions. In addition, the controller adjusts irradiation settings of the first and second set of radiation sources as a function of measurements obtained by the various sensors.

Controlling light exposure of light sensitive object

A solution for illuminating plants can include: a set of visible light sources configured to emit visible radiation directed at the plant; a set of infrared radiation sources configured to emit ultraviolet radiation directed at the plant; a feedback component configured to acquire data regarding the plant; and a control unit configured to control and adjust radiation directed at the plant based on the data.

Plant growth system

An optoelectronic device comprising at least one quantum well (QW) and at least one quantum dot (QD) incorporated in the quantum well with the band gap of the quantum well being larger than the band gap of the quantum dot. The QDs and QD arrays are embedded in various QW, thus providing higher yields in optoelectronic devices, such as light emitting diodes, lasers, and photodetectors. This is achieved by a nearly complete suppression of the nonradiative Auger recombination and enhancement of the light extraction efficiency.

QW-QWD LED with suppressed auger recombination

A heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can include a sacrificial layer, which is located on a substrate structure. The sacrificial layer can be at least partially decomposed using a laser. The substrate structure can be completely removed from the heterostructure or remain attached thereto. One or more additional solutions for detaching the substrate structure from the heterostructure can be utilized. The heterostructure can undergo additional processing to form the optoelectronic device.

Heterostructure for an optoelectronic device

Growing community of inventors

Latham, NY, United States of America

Michael Shur