Infineon Technologies Ag

Gebr. Schmidt Fabrik Fur Feinmechanik, Gmbh & Co. Kg

Michael Sesterhenn

Dirk Manger

Martin Popp

Till Schlösser

Tilo Strobelt

Joerg Mellmann

Guenther Waibel

A dosing device for demand-dosing a liquid includes a primary container, a point of release for releasing the liquid, a main liquid channel between the primary container and the point of release and a vented secondary container, wherein the secondary container is coupled to the main liquid channel at a branch point, wherein the secondary container and the main liquid channel are designed such that the main liquid channel preferably fills with the liquid before the secondary container. The dosing device further includes a liquid valve between the primary container and the branch point, a sensor for measuring the filling level in the secondary container and finally means for opening the valve responsive to a predetermined filling level in the secondary container. By measuring the flow not directly in the main stream but via a filling level of a secondary container in an auxiliary stream, the secondary container can be designed independently of ambient temperature and ambient pressure so that cases of failure due to changing ambient conditions do no longer occur. A preferred application of the dosing system is the use of it in an electronic writing apparatus.

Dosing device and writing implement with a dosing device

In semiconductor memories, in particular DRAMs, the memory cells of which have vertical transistors at vertical lands formed from substrate material, gate electrodes are formed as spacers which run around the land. The gate electrodes of adjacent memory cells conventionally have to be retroactively connected to form word lines. It is known to fill spaces between adjacent lands with an oxide, with the result that the spacers are formed directly as word lines but only cover two side walls of a land. Two transistors which are connected in parallel are formed at these side walls instead of a single transistor, since the gate electrode does not run around the land. The invention proposes a method for fabricating a semiconductor memory in which all four side walls of a land are covered by the word lines and at the same time lands of adjacent memory cells are connected to one another by the word lines.

Integrated semiconductor memory with wordlines conductively connected to one another in pairs

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Dresden, Germany

Michael Sesterhenn