Infineon Technologies Ag

Siemens Aktiengesellschaft

Qimonda Ag

Siemens Aktiengesell Schaft

Infineon Technology Ag

Michael Sebald

Recai Sezi

Rainer Leuschner

Siegfried Birkle

Hellmut Ahne

Ernst-Christian Richter

Christian Eschbaumer

Christoph Hohle

Jörg Rottstegge

Eberhard Kuehn

Gertrud Falk

Waltraud Herbst

Klaus Elian

Eva Rissel

Stefan Hien

Horst Borndoerfer

Ulrich Scheler

Eberhard Kühn

J&ouml;rg Rottstegge

Horst Borndorfer

Juergen Beck

G&uuml;nther Czech

Ernst Christian Richter

Udo Schwalke

Eberhard Kuhn

Werner Mormann

Hans Jurgen Bestmann

Wolf-Dieter Domke

Karl Kragler

Kerstin Seibold

Eva-Maria Rissel

Hans-Juergen Bestmann

Hellmut Ahhe

Siew Siew Yip

Seigfried Birkle

Hans-Jurgen Bestmann

Marion Kern

Karin Preissner

Jens Ferbitz

Eberhard K&uuml;hn

Jens Rottstegge

A method and intermediate product for structuring a substrate is disclosed. At least one seed layer including a first metal compound is positioned at least partially on the substrate. The seed layer is subjected to a solution comprising ions of a second metal compound. The ions are reduced in the solution by reduction means so that the second metal compound is deposited as mask layer on the seed layer.

Method for structuring a substrate using a metal mask layer formed using a galvanization process

The invention relates to a resist for electron beam lithography and to a process for producing photomasks for optical lithography. The inventive resist includes repeating units that are derived from maleic anhydride and that can act as an anchor group for the subsequent binding of silicon-containing groups. The etch stability of the resist can thus be subsequently increased so that there is no dimensional loss on transfer of the resist structure to a chromium layer arranged under the resist.

Resist for electron beam lithography and a process for producing photomasks using electron beam lithography

The invention relates to a process for the production of photomasks. A film of a photoresist, as used for structuring semiconductor substrates, for example a CARL resist, is applied to a chromium-coated quartz glass substrate. The photoresist layer is written on by means of a focused electron beam, heated and then developed. The now structured resist is treated with an amplification agent and thus increases in its etch resistance to an oxygen plasma. During etching of the bare chromium sections, the silicon introduced into the photoresist is converted into silicon dioxide, which forms a protective layer on the chromium layer. Thus, the structure written in by means of the electron beam can be transferred without loss into the chromium layer.

Lithographic process for reducing the lateral chromium structure loss in photomask production using chemically amplified resists

A photoresist contains a polymer that has no silicon-containing groups. Consequently, no expulsion of silicon-containing compounds in gaseous form occurs on exposure to short-wave radiation. The polymer is obtained by terpolymerization of a first comonomer having a group cleavable under acid catalysis, a second comonomer having an anchor group, and a monounsaturated hydrocarbon, in which individual carbon atoms of the carbon skeleton may also be replaced by oxygen, as a third comonomer. The polymer has a low glass transition temperature, and the photoresist therefore has a good layer quality on film formation and good structurability.

Resist for photolithography having reactive groups for subsequent modification of the resist structures

Outgassing products, which are formed during the exposure of photoresist systems by laser irradiation, are adsorbed on a proof plate for further analysis.

Apparatus and method for proof of outgassing products

A photoresist includes a polymer having a main chain composed of alternating silicon and oxygen atoms and a polymer chain segment which linked as a side chain to the main chain and whose chain is composed of carbon atoms. The chain composed of carbon atoms includes acid-labile groups, so that the photoresist according to the invention can be constructed as a chemically amplified photoresist.

Silicon-containing resist for photolithography

A process for the amplification of structured resists utilizes a reaction between a nucleophilic group and an isocyanate group or thiocyanate group to link an amplification agent to a polymer present in the photoresist. The isocyanate group or the thiocyanate group in addition to the nucleophilic group form a reaction pair. One of the partners is provided on the polymer and the other partner on the amplification agent. The amplification reaction takes place more rapidly than a linkage to carboxylic anhydride groups. Furthermore, the amplification reaction permits the use of polymers that have high transparency at short wavelengths of less than 200 nm, in particular 157 nm.

Process for silylating photoresists in the UV range

A photoresist includes a polymer which has acid-cleavable groups in its main chain. The polymer can thus be cleaved by acid into short cleavage products which can be removed from the substrate through the use of a developer. The polymer is completely or partially fluorinated, and consequently has an improved transparency to light of short wavelengths.

Photoresist based on polycondensates and having an increased resolution for use in 157 nanometer lithography

In a process for producing hard masks, an initiator layer that contains an initiator component is applied to a substrate. Then, a photoresist is used to produce a pattern on the initiator layer, in the trenches of which pattern the initiator layer is uncovered. Then, a curable hard mask material is applied and selectively cured, so that only those sections of the hard mask material that adjoin the initiator layer are cured. Finally, uncured hard mask material is removed using a solvent, and at the same time the lands formed from the resist are also removed. The pattern obtained in this way can then be transferred to the substrate, for example using plasma.

Process for producing hard masks

A chemically amplified photo-resist includes a polymer containing acid-labile radicals attached to a polar group and also contains anchor groups that allow attachment of a consolidating agent. The polymer includes first repeating units containing siloxane groups. The photoresist on the one hand exhibits an enhanced transparency for short-wavelength radiation and on the other hand permits chemical consolidation of the structured resist. A process for producing structured resists is a also described.

Silicon resist for photolithography at short exposure wavelengths and process for making photoresists

The invention relates to a process for producing amplified negative resist structures in which, following exposure and contrasting of the resist, the resist structure is simultaneously developed and aromatized. This substantially simplifies the production of amplified resist structures. Amplifying agents include compounds having not only a reactive group for attachment to an anchor group of the polymer, but also at least one aromatic group.

Negative resist process with simultaneous development and aromatization of resist structures

A process for chemically amplifying structured resists includes applying a chemically amplified resist to a substrate and structuring it in a customary manner. Preferably, the amplification agent is applied in an aqueous phase to the structured resist and, after chemical amplification is complete, excess agent is removed by an aqueous wash medium. By using water as a solvent for the amplification agent and as a wash medium, it is possible to avoid organic solvents that constitute an explosion hazard. Furthermore, removal of partially exposed resist sections is suppressed.

Process for modifying resist structures and resist films from the aqueous phase

The novel process lends itself to the production of highly resolved resist structures. A resist structure having webs is produced from a photoresist on a substrate and then the sidewalls of the webs are selectively chemically amplified so that chemically amplified sidewall structures are obtained. After the removal of the chemically unamplified sections, the amplified sidewall structures are transferred to the substrate. The process permits a resolution of structures that are not producible using the currently customary exposure wavelengths.

Process for sidewall amplification of resist structures and for the production of structures having reduced structure size

A method for structuring a photoresist layer is described. A substrate has a photoresist layer containing a film-forming polymer that has a photo acid generator that liberates an acid on exposure to light from a defined wavelength range &#x394;&#x3bb;. In addition, the polymer has a photo base generator that liberates a base on exposure to light from a defined wavelength range &#x394;&#x3bb;. The photoresist layer is first exposed in parts to light from the defined wavelength range &#x394;&#x3bb;, the light being chosen so that the photo base generator is substantially inert to the irradiation. The photoresist layer is then exposed to light from the defined wavelength range &#x394;&#x3bb;, the light being chosen so that the photo acid generator is substantially inert to the irradiation. The photoresist layer is then heated at which the cleavage reaction catalyzed by the photolytically produced acid takes place, and finally the photoresist layer is developed.

Method for structuring a photoresist layer

A photoresist compound or composition achieves a uniform volume growth in a chemical expansion on a chemically expandable photomask during a method for structuring a layer of the photoresist compound. The photoresist composition comprises a film-forming polymer having molecular groups that can be converted into alkali-soluble groups through acid-catalyzed separation reactions, and reactive molecular groups that can react with an expansion component so as to form a chemical bond. In addition, the photoresist composition comprises a photoacid generator that releases an acid upon exposure with radiation from a suitable wavelength range, and a thermoacid generator that releases an acid when supplied with sufficient thermal energy.

Photoresist compound and method for structuring a photoresist layer

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Weisendorf, Germany

Michael Sebald