Intersil Americas Inc.

Harris Corporation

Michael Sean Carmody

Anthony L Rivoli

George S Bajor

Dustin Alexander Woodbury

Donald Frank Hemmenway

Patrick Anthony Begley

Jeanne Marie McNamara

A bonded wafer has a device substrate with isolation trenches defining device regions Oxide dogbone structures are removed before filling trenches . Voids in the trenches are spaced from the top of the trenches. The trenches are covered with an oxide layer and filled with polysilicon A LOCOS mask structure comprising a layer of CVD pad oxide and silicon nitride cover the trenches and the adjacent device substrate regions.

Wafer trench article and process

A bonded wafer has a device substrate with isolation trenches defining device regions Oxide dogbone structures are removed before filling trenches Voids in the trenches are spaced from the top of the trenches. The trenches are covered with an oxide layer and filled with polysilicon A LOCOS mask structure comprising a layer of CVD pad oxide and silicon nitride cover the trenches and the adjacent device substrate regions.

A bonded wafer 100 has a device substrate 16 with isolation trenches 30 defining device regions 18. Oxide dogbone structures are removed before filling trenches 30. Voids 36 in the trenches are spaced from the top of the trenches. The trenches are covered with an oxide layer 30 and filled with polysilicon 34. A LOCOS mask structure comprising a layer of CVD pad oxide and silicon nitride 50 cover the trenches and the adjacent device substrate regions.

Growing community of inventors

Palm Bay, FL, United States of America

Michael Sean Carmody