Sick Engineering Gmbh

Applied Materials, Inc.

Michael Schmidt

Heiko Kuppi

Robert Jehn

Jens Moh

Gerry Schröter

Walter Schoenleber

Ursula Ingeborg Schmidt

Gas meter

An apparatus and method for in-situ etching of a substrate comprising both a polysilicon layer and an overlying dielectric layer. An embodiment of the method comprises an anisotropic etch of the dielectric layer in a chamber using a first fluorinated gas (such as CF,, NF,, SF,, and the like) as an etch gas to expose at least a portion of underlying polysilicon layer. Following the anisotropic etch and without removing the substrate from the chamber, i.e., in situ, an isotropic etch is preformed on the underlying polysilicon layer using a second fluorinated gas (such as CF,, NF,, SF,, and the like) as an etch gas.

Method and apparatus for sequentially etching a wafer using anisotropic and isotropic etching

Growing community of inventors

Ottendorf-Okrilla, Germany

Michael Schmidt