Osram Opto Semiconductors Gmbh

Osram Opto Semiconductor Gmbh

Michael Schmal

Franz Eberhard

Robert Walter

Julian Ikonomov

Martin Lemberger

Korbinian Perzlmaier

Reiner Windisch

Magnus Ahlstedt

Vincent Grolier

Reinhard Streitel

I-Hsin Lin-Lefebvre

Urs Heine

Eric Lefebvre

Markus Keidler

What is specified is a method for producing a coating comprising the following steps: &#x2014;providing a material source having a top surface and a main coating direction, &#x2014;providing a substrate holder having a top surface, &#x2014;providing at least one base layer, having a coating surface remote from the substrate holder, on the top surface of the substrate, &#x2014;attaching the substrate holder to a rotating arm, which has a length along a main direction of extent of the rotating arm, &#x2014;setting the length of the rotating arm in such a manner that a normal angle (&#x3c6;) throughout the method is at least 30&#xb0; and at most 75&#xb0;, &#x2014;applying at least one coating to that side of the base layer which has the coating surface by means of the material source, wherein&#x2014;during the coating process with the coating, the substrate holder is rotated about a substrate axis of rotation running along the main direction of extent of the rotating arm.

Method for producing a coating and optoelectronic semiconductor component having a coating

A device for converting the wavelength of electromagnetic radiation is disclosed. In an embodiment the device includes a carrier, a conversion layer configured to at least partly convert a wavelength of the electromagnetic radiation and an intermediate layer, wherein the conversion layer is connected to the carrier via the intermediate layer, and wherein the intermediate layer, at least in partial regions, includes a solid layer and a connection layer.

Device for converting the wavelength of electromagnetic radiation

An optoelectronic semiconductor body () having an active semiconductor layer sequence () and a reflective layer system () is described. The reflective layer system () comprises a first radiation-permeable layer (), which adjoins the semiconductor layer sequence (), and a metal layer () on the side of the first radiation-permeable layer () facing away from the semiconductor layer sequence (). The first radiation-permeable layer () contains a first dielectric material. Between the first radiation-permeable layer () and the metal layer () there is disposed a second radiation-permeable layer () which contains an adhesion-improving material. The metal layer () is applied directly to the adhesion-improving material. The adhesion-improving material differs from the first dielectric material and is selected such that the adhesion of the metal layer () is improved in comparison with the adhesion on the first dielectric material.

Optoelectronic semiconductor bodies having a reflective layer system

A radiation-emitting body comprising a layer sequence, having an active layer () for generating electromagnetic radiation, having a reflection layer (), which reflects the generated radiation, and having at least one intermediate layer () arranged between the active layer () and the reflection layer (). In this case, the active layer () has a roughening on an interface () directed toward the reflection layer (), and the reflection layer () is substantially planar at an interface () directed toward the active layer (). Also disclosed is a method for producing a radiation-emitting body, which involves forming a layer sequence on a substrate having an active layer () for generating electromagnetic radiation. In this case, the method comprises roughening an interface () on the active layer (), and forming at least one intermediate layer () and a reflection layer ().

Radiation emitting body and method for producing a radiation-emitting body

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Schmidmühlen, Germany

Michael Schmal