Applied Materials, Inc.

Michael Santiago Cox

Brian T West

Canfeng Lai

Rongping Wang

Colin John Dickinson

Roger M Johnson

Shamouil Shamouilian

Padmanabhan Krishnaraj

Jeonghoon Oh

Zheng Yuan

Zhenjiang Cui

Lara Hawrylchak

Peter K Loewenhardt

Jun Zhao

Tsutomu Tanaka

John P Parks

Rick J Roberts

Paul E Fisher

Monique McIntosh

Yutaka Tanaka

Li-Qun Xia

Michael S Barnes

Christopher F Lane

Muhammad M Rasheed

Kirankumar Neelasandra Savandaiah

Hichem M'Saad

Mihaela A Balseanu

Farhad K Moghadam

Alan A Ritchie

Lin Zhang

Steven Victor Sansoni

Ronald Vern Schauer

Mei-Yee Shek

Vladimir Zubkov

Thanh Ngoc Pham

Tzu-Fang Huang

Lily L Pang

Donny Young

Jia Lee

Bruno Geoffrion

Pavel Ionov

James Omer L'Heureux

Isabelita Roflox

David Muquing Hou

Robert B Majewski

David P Wanamaker

Jibing Zeng

Cheryl A Knepfler

Simon Nicholas Binns

Dinkesh Somanna

Srinivas D Nemani

Mei Yin Chang

Srinivas Gandikota

Anchuan Wang

Xianmin Tang

Anantha K Subramani

Keith A Miller

Rongjun Wang

Qiwei Liang

Alexandros T Demos

Thomas E Nowak

Tza-Jing Gung

Tom K Cho

Jian J Chen

Adolph Miller Allen

Peter I Porshnev

Zhenbin Ge

Laxman Murugesh

Yan Rozenzon

Sudhir R Gondhalekar

Sebastien Raoux

Zhendong Liu

Andrew V Le

Khaled A Elsheref

Bikram Kapoor

Zhigang Xie

Pallavi Zhang

Jennifer Watia Tiller

Miroslav Gelo

Padmanaban Krishnaraj

Leung Kway Lee

Michel Anthony Rosa

Paddy Krishnaraj

Narendra Dubey

James L'heureux

Dustin W Ho

A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH, HO, H, NF, SF, F, HCl, HF, Cl, and HBr. Representative condensing abating reagents include, for example, H, HO, O, N, O, CO, CO, NH, NO, CH, and combinations thereof.

Plasma abatement of compounds containing heavy atoms

Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes an exhaust cooling apparatus located downstream of a plasma source. The exhaust cooling apparatus includes at least one cooling plate a device for introducing turbulence to the exhaust flowing within the exhaust cooling apparatus. The device may be a plurality of fins, a cylinder with a curved top portion, or a diffuser with angled blades. The turbulent flow of the exhaust within the exhaust cooling apparatus causes particles to drop out of the exhaust, minimizing particles forming in equipment downstream of the exhaust cooling apparatus.

Apparatus for exhaust cooling

Embodiments of the invention generally relate to an anode for a semiconductor processing chamber. More specifically, embodiments described herein relate to a process kit including a shield serving as an anode in a physical deposition chamber. The shield has a cylindrical band, the cylindrical band having a top and a bottom, the cylindrical band sized to encircle a sputtering surface of a sputtering target disposed adjacent the top and a substrate support disposed at the bottom, the cylindrical band having an interior surface. A texture is disposed on the interior surface. The texture has a plurality of features. A shaded area is disposed in the feature wherein the shaded area is not visible to the sputtering target. A small anode surface is disposed in the shaded area.

Non-disappearing anode for use with dielectric deposition

Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.

Sputtering target with backside cooling grooves

A process chamber includes a chamber body having a chamber lid assembly disposed thereon, one or more monitoring devices coupled to the chamber lid assembly, and one or more antennas disposed adjacent to the chamber lid assembly that are in communication with the one or more monitoring devices.

Smart chamber and smart chamber components

A PVD chamber deposits a film with high thickness uniformity. The PVD chamber includes a coil of an electromagnetic that, when energized with direct current power, can modify plasma in an edge portion of the processing region of the PVD chamber. The coil is disposed within the vacuum-containing portion of the PVD chamber and outside a processing region of the PVD chamber.

Physical vapor deposition in-chamber electro-magnet

Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

High pressure RF-DC sputtering and methods to improve film uniformity and step-coverage of this process

Embodiments disclosed herein include a plasma source, an abatement system and a vacuum processing system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source includes a dielectric tube and a coil antenna surrounding the tube. The coil antenna includes a plurality of turns, and at least one turn is shorted. Selectively shorting one or more turns of the coil antenna helps reduce the inductance of the coil antenna, allowing higher power to be supplied to the coil antenna that covers more processing volume. Higher power supplied to the coil antenna and larger processing volume lead to an improved DRE.

Method and apparatus for gas abatement

Embodiments described herein generally relate to a plasma processing chamber and a detection apparatus for arcing events. In one embodiment, an arcing detection apparatus is disclosed herein. The arcing detection apparatus comprises a probe, a detection circuit, and a data log system. The probe positioned partially exposed to an interior volume of a plasma processing chamber. The detection circuit is configured to receive an analog signal from the probe and output an output signal scaling events present in the analog signal. The data log system is communicatively coupled to receive the output signal from the detection circuit. The data log system is configured to track arcing events occurring in the interior volume.

Arcing detection apparatus for plasma processing

Embodiments of the present disclosure provides apparatus and method for stabilizing substrate temperature by flowing a flow of cooling gas to an inlet of cooling channels in a substrate support, receiving the flow of cooling gas from an outlet of the cooling channel using a heat exchanger, and releasing the cooling gas to an immediate environment, such as a cleanroom or a minienvironment.

Gas cooled substrate support for stabilized high temperature deposition

Embodiments described herein provide an electrostatic carrier for transferring a substrate. The electrostatic carrier may have a transparent body. The transparent body may have a first surface sized to transport the substrate into and out of a processing chamber. The electrostatic carrier may also have one or more electrostatic chucking electrodes coupled to the transparent body. The one or more electrostatic chucking electrodes may include a transparent conductive oxide material. In certain embodiments the transparent conductive oxide material is an indium-tin oxide material.

Transparent electrostatic carrier

Embodiments described herein relate to an apparatus and method for securing and transferring substrates. A substrate carrier, having one or more electrostatic chucking electrodes disposed therein, electrostatically couples a substrate to the carrier. Optionally, a mask may also be electrostatically coupled to the carrier and may be disposed over a region of the carrier not occupied by the substrate. In one embodiment, multiple electrode assemblies are provided such that a first electrode assembly chucks the substrate to the carrier and a second electrode assembly chucks the mask to the carrier. In another embodiment, a pocket is formed in the carrier and an electrode assembly provides chucking capability within the pocket.

Wafer carrier for smaller wafers and wafer pieces

Growing community of inventors

Gilroy, CA, United States of America

Michael Santiago Cox