Medtronic, Inc.

Corning Incorporated

Invenios Inc

Michael S Sandlin

David A Ruben

Georges Roussos

Thomas M Wynne

Raymond Miller Karam

John K Day

Ralph B Danzl

Raymond M Karam, Ii

Bulk materials having a kinetically limited nano-scale diffusion bond is provided. The bulk materials having a kinetically limited nano-scale diffusion bond includes transparent material, absorbent opaque material and a diffusion bond. The transparent material has properties that allow an electromagnetic beam of a select wavelength to pass there through without more than minimal energy absorption. The absorbent opaque material has properties that significantly absorb energy from the electromagnetic beam. The diffusion bond is formed by the electromagnetic beam bonding the transparent material to the absorbent opaque material. Moreover, the diffusion bond has a thickness that is less than 1000 nm.

Kinetically limited nano-scale diffusion bond structures and methods

A glass wafer has an internal surface and an opposing external surface separated by a wafer thickness. A hermetic, electrically conductive feedthrough extends through the wafer from the internal surface to the opposing external surface. The feedthrough includes a feedthrough member having an inner face exposed along the internal surface for electrically coupling to an electrical circuit. The feedthrough member extends from the inner face partially through the wafer thickness to an exteriorly-facing outer face hermetically embedded within the wafer.

Hermetic conductive feedthroughs for a semiconductor wafer

Various embodiments of a feedthrough assembly and methods of forming such assemblies are disclosed. In one or more embodiments, the feedthrough assembly can include a non-conductive substrate and a feedthrough. The feedthrough can include a via from an outer surface to an inner surface of the non-conductive substrate, a conductive material disposed in the via, and an external contact disposed over the via on the outer surface of the non-conductive substrate. The external contact can be electrically coupled to the conductive material disposed in the via. And the external contact can be hermetically sealed to the outer surface of the non-conductive substrate by a bond surrounding the via. In one or more embodiments, the bond can be a laser bond.

Feedthrough assemblies and methods of forming same

Various embodiments of an implantable medical device system and methods of forming such systems are disclosed. In one or more embodiments, the implantable medical device system includes a housing, electronics disposed within the housing, and a feedthrough assembly attached to a sidewall of the housing and electrically coupled to the electronics. The feedthrough assembly can include a non-conductive substrate and a feedthrough. The feedthrough can include a via from an outer surface to an inner surface of the non-conductive substrate, a conductive material disposed in the via, and an external contact disposed over the via on the outer surface of the non-conductive substrate, where the external contact is electrically coupled to the conductive material disposed in the via. In one or more embodiments, the external contact is hermetically sealed to the outer surface of the non-conductive substrate by a laser bond surrounding the via.

Implantable medical device system including feedthrough assembly and method of forming same

Feedthrough assemblies

A device having embedded metallic structures in a glass is provided. The device includes a first wafer, at least one conductive trace, a planarized insulation layer and a second wafer. The first wafer has at least one first wafer via that is filled with conductive material. The at least one conductive trace is formed on the first wafer. The at least one conductive trace is in contact with the at least one first wafer via that is filled with the conductive material. The planarized insulation layer is formed over the first wafer and at least one conductive trace. The planarized insulation layer further has at least one insulation layer via that provides a path to a portion of the at least one conductive trace. The second wafer is bonded to the planarized insulation layer.

Embedded metallic structures in glass

A method includes depositing a thin film on a first surface of a first substrate and moving a second surface of a second substrate into contact with the thin film such that the thin film is located between the first and second surfaces. The method further includes generating electromagnetic (EM) radiation of a first wavelength, the first wavelength selected such that the thin film absorbs EM radiation at the first wavelength. Additionally, the method includes directing the EM radiation through one of the first and second substrates and onto a region of the thin film until the first and second substrates are fused in the region.

Devices formed with techniques for bonding substrates using an intermediate layer

Techniques are described for directly bonding different substrates together. In some examples, a technique includes placing a first surface of a first substrate in contact with a second surface of a second substrate to directly bond the first substrate to the second substrate at a contact location. The contact location is defined where at least a portion of the first surface of the first substrate contacts at least a portion of the second surface of the second substrate. The technique may also include directing a laser beam on at least a portion of the contact location to strengthen the direct bond between the first substrate and the second substrate. In this manner, a direct bond may be heated with localized laser energy to strengthen the direct bond. Localized laser energy may create a strong direct bond while minimizing thermal defects in regions proximate the direct bond.

Growing community of inventors

Chandler, AZ, United States of America

Michael S Sandlin